TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/612
DEVICES
LEVELS
2N7372
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25°C
(1)
@ T
C
= +25°C
(2)
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
j
, T
stg
R
θJC
Value
80
100
5.5
5.0
4.0
58
-65 to +200
3
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
PIN 1 = BASE
PIN 2 = COLLECTOR
PIN 3 = EMITTER
TO-254AA
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
1)
2)
Derate linearly 22.8mW/°C for T
A
> 25°C
Derate linearly 331mW/°C for T
C
> 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0Vdc
V
CE
= 100Vdc, V
BE
= 0Vdc
Collector-Emitter Cutoff Current
V
CE
= 40Vdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc
V
EB
= 5.5Vdc
V
(BR)CEO
I
CES1
I
CES2
I
CEO
I
EBO1
I
EBO2
80
Vdc
Symbol
Min.
Max.
Unit
1.0
1.0
µAdc
mAdc
50
1.0
1.0
µAdc
µAdc
mAdc
T4-LDS-0045 Rev. 1 (072805)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PNP POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/612
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
(CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 0.05Adc, V
CE
= 5.0Vdc
I
C
= 2.5Adc, V
CE
= 5.0Vdc
I
C
= 5.0Adc, V
CE
= 5.0Vdc
Base-Emitter Non-Saturated Voltage
V
CE
= 5.0Vdc, I
C
= 2.5Adc
Base-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 0.25Adc
I
C
= 5.0Adc, I
B
= 0.5Adc
Collector-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 0.25Adc
I
C
= 5.0Adc, I
B
= 0.5Adc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio
V
CE
= 5Vdc, I
C
= 100mAdc, f = 1kHz
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 5Vdc, f = 10MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t = 1s
Test 1
V
CE
= 12Vdc, I
C
= 5.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 1.5Adc
Test 3
V
CE
= 80Vdc, I
C
= 100mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
h
fe
50
Symbol
Min.
Max.
Unit
h
FE1
h
FE2
h
FE3
V
BE
V
BE(sat)1
V
BE(sat)2
50
70
40
---
200
---
1.45
Vdc
Symbol
Min.
Max.
Unit
1.45
2.2
Vdc
V
CE(sat)1
V
CE(sat)2
0.75
1.5
Vdc
|h
fe
|
7.0
C
obo
250
pF
T4-LDS-0045 Rev. 1 (072805)
Page 2 of 2
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