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JANHC2N2221AL

Description
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size43KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

JANHC2N2221AL Overview

Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN

JANHC2N2221AL Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-206AA
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500/255
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)35 ns
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
LEVELS
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC *
*
Available to JANS quality level only.
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC *
JAN
JANTX
JANTXV
JANS
JANHC
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op
, T
stg
Value
50
75
6.0
800
0.5
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-18 (TO-206AA)
2N2221A, 2N2222A
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJA
Max.
325
Unit
°C/W
Note:
Consult 19500/255 for thermal performance curves.
4 PIN
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
Collector-Base Cutoff Current
V
CB
= 75Vdc
V
CB
= 60Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 4.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
V
(BR)CEO
I
CBO
50
10
10
10
10
50
Vdc
μAdc
ηAdc
μAdc
ηAdc
ηAdc
2N2221AUA, 2N2222AUA
Symbol
Min.
Max.
Unit
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
I
EBO
I
CES
T4-LDS-0060 Rev. 1 (080860)
Page 1 of 2

JANHC2N2221AL Related Products

JANHC2N2221AL JANHC2N2221AUA JANHC2N2221A JANHC2N2221AUB
Description Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
Is it lead-free? Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction CYLINDRICAL, O-MBCY-W3 SMALL OUTLINE, R-XDSO-N4 CYLINDRICAL, O-MBCY-W3 SMALL OUTLINE, R-XDSO-N3
Reach Compliance Code compli compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20
JESD-30 code O-MBCY-W3 R-XDSO-N4 O-MBCY-W3 R-XDSO-N3
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 3 4 3 3
Package body material METAL UNSPECIFIED METAL UNSPECIFIED
Package shape ROUND RECTANGULAR ROUND RECTANGULAR
Package form CYLINDRICAL SMALL OUTLINE CYLINDRICAL SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Guideline MIL-19500/255 MIL-19500/255 MIL-19500/255 MIL-19500/255
surface mount NO YES NO YES
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE NO LEAD WIRE NO LEAD
Terminal location BOTTOM DUAL BOTTOM DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Maximum off time (toff) 300 ns 300 ns 300 ns 300 ns
Maximum opening time (tons) 35 ns 35 ns 35 ns 35 ns
Base Number Matches 1 1 1 1
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