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BUK7C06-40AITE_15

Description
N-channel TrenchPLUS standard level FET
File Size200KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BUK7C06-40AITE_15 Overview

N-channel TrenchPLUS standard level FET

BUK7C06-40AITE
N-channel TrenchPLUS standard level FET
Rev. 05 — 16 February 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. The devices include TrenchPLUS current sensing
and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Allows responsive temperature
monitoring due to integrated
temperature sensor
Electrostatically robust due to
integrated protection diodes
Low conduction losses due to low
on-state resistance
Q101 compliant
Reduced component count due to
integrated current sensor
1.3 Applications
Automotive and general purpose
power switching
Electrical Power Assisted Steering
(EPAS)
Fan control
Variable valve timing for engines
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
Quick reference
Parameter
drain-source voltage
drain current
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 2; [1]
see
Figure 3
V
GS
= 10 V; I
D
= 50 A; T
j
= 25 °C; see
Figure 7;
see
Figure 8
T
j
> -55 °C; T
j
< 175 °C; V
GS
= 10 V
I
F
= 250 µA; T
j
> -55 °C; T
j
< 175 °C
I
F
= 250 µA; T
j
= 25 °C
Min
-
-
Typ
-
-
Max
40
155
Unit
V
A
Static characteristics
R
DSon
I
D
/I
sense
S
F(TSD)
V
F(TSD)
drain-source on-state
resistance
ratio of drain current to
sense current
temperature sense diode
temperature coefficient
temperature sense diode
forward voltage
[1]
-
585
-1.4
648
4.7
615
-1.54
658
6
645
-1.68
668
mΩ
mV/K
mV
Current is limited by power dissipation chip rating.
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