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2N1488E3

Description
Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size52KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2N1488E3 Overview

Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

2N1488E3 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage55 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)1 MHz
Base Number Matches1
TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices
2N1487
2N1488
2N1489
2N1490
Qualified Level
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
0
2N1487
2N1498
40
60
60
10
3.0
6.0
75
2N1488
2N1490
55
100
100
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
0
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
-65 to +200
Max.
2.33
C
TO-33*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.429 W/ C for T
C
> 25 C
*See Appendix A for
Package Outline
0
R
θ
JC
0
Unit
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200
µAdc
Collector-Emitter Breakdown Voltage
I
C
= 0.5 mAdc, V
EB
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 30 Vdc
Emitter-Base Cutoff Current
V
EB
= 10 Vdc
2N1487, 2N1489
2N1488, 2N1490
2N1487, 2N1489
2N1488, 2N1490
2N1487, 2N1489
2N1488, 2N1490
V
(BR)
CEO
40
55
60
100
60
100
25
25
Vdc
V
(BR)
CBO
Vdc
V
(BR)
CEX
I
CBO
I
EBO
Vdc
µAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

2N1488E3 Related Products

2N1488E3 2N1487E3 2N1489E3
Description Power Bipolar Transistor, 6A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Reach Compliance Code unknow unknown unknow
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A 6 A 6 A
Collector-emitter maximum voltage 55 V 40 V 40 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 25
JEDEC-95 code TO-204AA TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1
Number of terminals 2 2 2
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 1 MHz 1 MHz 1 MHz
Base Number Matches 1 - 1
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