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MAC97 Series
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO−92 package which is readily adaptable for use in
automatic insertion equipment.
Features
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•
One−Piece, Injection−Molded Package
•
Blocking Voltage to 600 Volts
•
Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
•
All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage
(T
J
= −40 to +110°C) (Note 1)
Sine Wave 50 to 60 Hz, Gate Open
MAC97A4
MAC97A6
MAC97A8
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= +50°C)
Peak Non−Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(T
C
= 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
Peak Gate Voltage
(t
v
2.0
ms,
T
C
= +80°C)
Peak Gate Power
(t
v
2.0
ms,
T
C
= +80°C)
Average Gate Power
(T
C
= 80°C, t
v
8.3 ms)
Peak Gate Current
(t
v
2.0
ms,
T
C
= +80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
200
400
600
I
T(RMS)
0.6
A
1
I
TSM
8.0
A
2
Value
Unit
V
TRIACS
0.8 AMPERE RMS
200 thru 600 VOLTS
MT2
G
MT1
MARKING
DIAGRAMS
TO−92 (TO−226AA)
CASE 029
STYLE 12
3
MAC
97Ax
AYWWG
G
I
2
t
V
GM
P
GM
P
G(AV)
I
GM
T
J
T
stg
0.26
5.0
5.0
0.1
1.0
−40 to +110
−40 to +150
A
2
s
V
W
W
A
°C
°C
MAC97Ax = Device Code
x = 4, 6, or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
2
3
Main Terminal 1
Gate
Main Terminal 2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 9
Publication Order Number:
MAC97/D
MAC97 Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
75
200
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage
(I
TM
=
".85
A Peak; Pulse Width
v
2.0 ms, Duty Cycle
v
2.0%)
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100
W)
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Gate Non−Trigger Voltage
(V
D
= 12 V, R
L
= 100
W,
T
J
= 110°C)
All Four Quadrants
Holding Current
(V
D
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
Turn-On Time
(V
D
= Rated V
DRM
, I
TM
= 1.0 A pk, I
G
= 25 mA)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Commutation Voltage
(V
D
= Rated V
DRM
, I
TM
= .84 A,
Commutating di/dt = .3 A/ms, Gate Unenergized, T
C
= 50°C)
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, T
C
= 110°C, Gate Open, Exponential Waveform
dV/dt(c)
−
5.0
−
V/ms
V
TM
I
GT
−
−
−
−
V
GT
−
−
−
−
V
GD
0.1
.66
.77
.84
.88
−
2.0
2.0
2.0
2.5
−
V
−
−
−
−
5.0
5.0
5.0
7.0
V
−
−
1.9
V
mA
I
DRM
, I
RRM
T
J
= 25°C
T
J
= +110°C
−
−
−
−
10
100
mA
mA
Symbol
Min
Typ
Max
Unit
I
H
t
gt
−
−
1.5
2.0
10
−
mA
ms
dv/dt
−
25
−
V/ms
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2
MAC97 Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC97 Series
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
110
I T(RMS) , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (
°
C)
T
= 30°
60°
DC
180°
70
60
50
40
30
0
a
a
= CONDUCTION ANGLE
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
a
120°
90°
110
100
90
80
70
60
50
40
30
20
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
0
a
a
= CONDUCTION ANGLE
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
a
DC
180°
120°
T
= 30°
60°
90°
100
90
80
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. RMS Current Derating
P (AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
1.2
1.0
0.8
0.6
a
a
= CONDUCTION ANGLE
120°
a
DC
180°
6.0
4.0
T
J
= 110°C
2.0
25°C
1.0
90°
0.2
T
= 30°
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
60°
ITM , INSTANTANEOUS ON-STATE CURRENT (AMP)
0.4
0.6
0.4
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
0.2
Figure 3. Power Dissipation
0.1
0.06
0.04
0.02
0.01
0.006
0.4
1.2
2.0
2.8
3.6
4.4
5.2
6.0
V
TM
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 4. On−State Characteristics
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