Silicon Controlled Rectifier, 11000mA I(T), 200V V(DRM),
| Parameter Name | Attribute value |
| package instruction | , |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Nominal circuit commutation break time | 40 µs |
| Critical rise rate of minimum off-state voltage | 50 V/us |
| Maximum DC gate trigger current | 80 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum leakage current | 2.5 mA |
| On-state non-repetitive peak current | 350 A |
| Maximum on-state current | 11000 A |
| Maximum operating temperature | 100 °C |
| Minimum operating temperature | -40 °C |
| Off-state repetitive peak voltage | 200 V |
| surface mount | NO |
| Trigger device type | SCR |
| Base Number Matches | 1 |