EDI7F2341MZ100BNC datasheet, PDF

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EDI7F2341MZ100BNC: DescriptionFlash Module, 2MX32, 100ns, SIMM-80; Categorystorage storage; File Size180KB，3 Pages; ManufacturerEDI [Electronic devices inc.]

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EDI7F2341MZ100BNC Overview

Flash Module, 2MX32, 100ns, SIMM-80

EDI7F2341MZ100BNC Parametric

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
package instruction	SIMM-80
Reach Compliance Code	unknown
Maximum access time	100 ns
JESD-30 code	R-XSMA-N80
memory density	67108864 bit
Memory IC Type	FLASH MODULE
memory width	32
Number of functions	1
Number of terminals	80
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
organize	2MX32
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Programming voltage	12 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Terminal form	NO LEAD
Terminal location	SINGLE
type	NOR TYPE

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EDI7F34IMZ

1Megx32

1Megx32 Flash Module

The EDI7F34IMZ and EDI7F2341MZ are orga-

nized as one and two banks of 1 Meg x 32 respec-

tively. The modules are based on Intel's E28F008SA

- 1Megx8 Flash device in TSOP packages which

are mounted on an FR4 substrate.

Both modules offer access times between 90 and

150ns allowing for operation of high-speed micro-

processors without wait states.

Block Diagrams

EDI7F34IMZ-BNC

1Megx32 80 pin SIMM

VPP

E0\

A0-A19

1Mx8

DQ0-DQ7

W0\

Features

• 1 Meg x 32 and 2 x 1 Meg x 32 Densities

• Based on Intel's E28F00SA Flash Device

• High Density Symmetrically-Blocked

Architecture

• 5 Volt +10% Operation

• Low Power Dissipation

• 20mA per Device Active Current

• 10µA per Device CMOS Standby Current

• Typical Endurance >100,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• 12 Volt Byte Write/Block erase

• Commercial and Industrial Temperature Range

• 80 pin SIMM JEDEC Package

W1\

1Mx8

DQ8-DQ15

1Mx8

DQ16-DQ23

W2\

1Mx8

DQ24-DQ31

W3\

EDI7F234IMZ-BNC

2x1Megx32 80 pin SIMM

E1\

Eﬂ\

A0-A19

1Mx8

W0\

1Mx8

W1\

1Mx8

W2\

1Mx8

W3\

1Mx8

DQ16-DQ23

DQ8-DQ15

1Mx8

DQ0-DQ7

DQ24-DQ31

Electronic Designs, Inc.

• One Research Drive • Westborough, MA 01581USA • 508-366-5151 • FAX 508-836-4850 •

Electronic Designs Europe Ltd. •

Shelley House, The Avenue • Lightwater, Surrey GU18 5RF

United Kingdom • 01276 472637 • FAX: 01276 473748

http://www.electronic-designs.com

EDI7F34IMZ Rev. 9/98 ECO #

EDI7F2341MZ100BNC Related Products

	EDI7F2341MZ100BNC	EDI7F341MZ100BNC	EDI7F2341MZ120BNC	EDI7F2341MZ90BNC	EDI7F341MZ90BNC	EDI7F341MZ120BNC	EDI7F2341MZ150BNC	EDI7F341MZ150BNC
Description	Flash Module, 2MX32, 100ns, SIMM-80	Flash Module, 1MX32, 100ns, SIMM-80	Flash Module, 2MX32, 120ns, SIMM-80	Flash Module, 2MX32, 90ns, SIMM-80	Flash Module, 1MX32, 90ns, SIMM-80	Flash Module, 1MX32, 120ns, SIMM-80	Flash Module, 2MX32, 150ns, SIMM-80	Flash Module, 1MX32, 150ns, SIMM-80
package instruction	SIMM-80	SIMM-80	SIMM-80	SIMM-80	SIMM-80	SIMM-80	SIMM-80	SIMM-80
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow
Maximum access time	100 ns	100 ns	120 ns	90 ns	90 ns	120 ns	150 ns	150 ns
JESD-30 code	R-XSMA-N80	R-XSMA-N80	R-XSMA-N80	R-XSMA-N80	R-XSMA-N80	R-XSMA-N80	R-XSMA-N80	R-XSMA-N80
memory density	67108864 bit	33554432 bit	67108864 bit	67108864 bit	33554432 bit	33554432 bit	67108864 bi	33554432 bi
Memory IC Type	FLASH MODULE	FLASH MODULE	FLASH MODULE	FLASH MODULE	FLASH MODULE	FLASH MODULE	FLASH MODULE	FLASH MODULE
memory width	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	80	80	80	80	80	80	80	80
word count	2097152 words	1048576 words	2097152 words	2097152 words	1048576 words	1048576 words	2097152 words	1048576 words
character code	2000000	1000000	2000000	2000000	1000000	1000000	2000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
organize	2MX32	1MX32	2MX32	2MX32	1MX32	1MX32	2MX32	1MX32
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	12 V	12 V	12 V	12 V	12 V	12 V	12 V	12 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
Maker	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	-	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]

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