TM2EP72DJN-70 datasheet, PDF - EEWORLD Datasheet

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TM2EP72DJN-70: Description2MX72 EDO DRAM MODULE, 18ns, DMA168, DIMM-168; Categorystorage storage; File Size328KB，22 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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TM2EP72DJN-70 Overview

2MX72 EDO DRAM MODULE, 18ns, DMA168, DIMM-168

TM2EP72DJN-70 Parametric

Parameter Name	Attribute value
Maker	Texas Instruments
Parts packaging code	DIMM
package instruction	DIMM-168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	18 ns
Other features	CAS BEFORE RAS REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	150994944 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
Maximum standby current	0.009 A
Maximum slew rate	0.736 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

TM2EP72DJN-70 Related Products

	TM2EP72DJN-70	TM2EP64DJN-70	TM2EP64DPN-60	TM4EP72DJN-70
Description	2MX72 EDO DRAM MODULE, 18ns, DMA168, DIMM-168	2MX64 EDO DRAM MODULE, 18ns, DMA168, DIMM-168	2MX64 EDO DRAM MODULE, 15ns, DMA168, DIMM-168	4MX72 EDO DRAM MODULE, 18ns, DMA168, DIMM-168
Maker	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
Parts packaging code	DIMM	DIMM	DIMM	DIMM
package instruction	DIMM-168	DIMM-168	DIMM-168	DIMM-168
Contacts	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	18 ns	18 ns	15 ns	18 ns
Other features	CAS BEFORE RAS REFRESH	CAS BEFORE RAS REFRESH	CAS BEFORE RAS REFRESH	CAS BEFORE RAS REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	150994944 bit	134217728 bit	134217728 bit	301989888 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	72	64	64	72
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	168	168	168	168
word count	2097152 words	2097152 words	2097152 words	4194304 words
character code	2000000	2000000	2000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	2MX72	2MX64	2MX64	4MX72
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	2048	2048	2048	2048
Maximum standby current	0.009 A	0.008 A	0.008 A	0.018 A
Maximum slew rate	0.736 mA	0.72 mA	0.8 mA	0.828 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO
technology	MOS	MOS	MOS	MOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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