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Datasheet> All Categories > Discrete semiconductor> The transistor> JANTX2N5116UB
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JANTX2N5116UB

Description
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size50KB，2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTX2N5116UB Overview

Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3

JANTX2N5116UB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-CDSO-N3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain-source on-resistance175 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)7 pF
JESD-30 codeR-CDSO-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
GuidelineMIL-19500/476C
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/476
Devices
Qualified
Level
2N5115
2N5115UB
2N5116
2N5116UB
JAN
JANTX
JANTXV
2N5114
2N5114UB
ABSOLUTE MAXIMUM RATINGS
(T
C
=+25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
All Devices
Gate-Source Voltage
V
GS
30
(1)
Drain-Source Voltage
V
DS
30
Drain-Gate Voltage
V
DG
30
Gate Current
I
G
50
0 (2)
Power Dissipation
T
A
= +25 C
P
T
0.500
Storage Temperature Range
T
stg
-65 to +200
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/
0
C for T
A
> 25
0
C.
(1)
Unit
Vdc
Vdc
Vdc
mAdc
W
0
C
TO-18*
(TO-206AA)
Surface Mount
(UB version)
*See appendix A
for package
outline
ELECTRICAL CHARACTERISTICS
(T
C
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
µAdc
Drain-Source “On” State Voltage
V
GS
= 0 Vdc, I
D
= -15 mAdc
V
GS
= 0 Vdc, I
D
= -7.0 mAdc
V
GS
= 0 Vdc, I
D
= -3.0 mAdc
Gate Reverse Current
V
DS
= 0, V
GS
= 20 Vdc
Drain Current Cutoff
V
GS
= 12 Vdc, V
DS
= -15 Vdc
V
GS
= 7.0 Vdc, V
DS
= -15 Vdc
V
GS
= 5.0 Vdc, V
DS
= -15 Vdc
V
(BR)GSS
2N5114
2N5115
2N5116
Min.
30
Max.
Units
Vdc
V
DS(on)
1.3
0.8
0.6
500
Vdc
I
GSS
2N5114
2N5115
2N5116
pAdc
I
D(off)
-500
-500
-500
pAdc
pAdc
pAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
022802
Page 1 of 2

JANTX2N5116UB Related Products

JANTX2N5116UB JANTXV2N5114UB JANTX2N5114UB JAN2N5114UB JANTX2N5115UB JAN2N5115UB 2SC4350_15 JAN2N5116UB
Description Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3 Silicon NPN Power Transistors Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Junction FET, CERAMIC PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible - incompatible
package instruction SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 SMALL OUTLINE, R-CDSO-N3 - SMALL OUTLINE, R-CDSO-N3
Contacts 3 3 3 3 3 3 - 3
Reach Compliance Code _compli not_compliant _compli not_compliant _compli _compli - _compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 - EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE - SINGLE
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V 30 V 30 V - 30 V
Maximum drain-source on-resistance 175 Ω 75 Ω 75 Ω 75 Ω 100 Ω 100 Ω - 175 Ω
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION - JUNCTION
Maximum feedback capacitance (Crss) 7 pF 7 pF 7 pF 7 pF 7 pF 7 pF - 7 pF
JESD-30 code R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 R-CDSO-N3 - R-CDSO-N3
JESD-609 code e0 e0 e0 e0 e0 e0 - e0
Number of components 1 1 1 1 1 1 - 1
Number of terminals 3 3 3 3 3 3 - 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE - DEPLETION MODE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL - P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
Guideline MIL-19500/476C MIL-19500/476C MIL-19500/476C MIL-19500/476C MIL-19500/476C MIL-19500/476C - MIL-19500/476C
surface mount YES YES YES YES YES YES - YES
Terminal surface Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) TIN LEAD Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD - NO LEAD
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON - SILICON
Base Number Matches 1 - 1 - 1 1 - 1

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