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2N6758TX

Description
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
CategoryDiscrete semiconductor    The transistor   
File Size110KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2N6758TX Overview

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

2N6758TX Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresRADIATION HARDENED
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)15 A
Certification statusNot Qualified
GuidelineMILITARY STANDARD (USA)
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

2N6758TX Related Products

2N6758TX 2N6758TXV
Description Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features RADIATION HARDENED RADIATION HARDENED
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (ID) 9 A 9 A
Maximum drain-source on-resistance 0.4 Ω 0.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 15 A 15 A
Certification status Not Qualified Not Qualified
Guideline MILITARY STANDARD (USA) MILITARY STANDARD (USA)
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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