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CY7C1370D-167AXIT

Description
ZBT SRAM, 512KX36, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
Categorystorage    storage   
File Size819KB,34 Pages
ManufacturerCypress Semiconductor
Environmental Compliance  
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CY7C1370D-167AXIT Overview

ZBT SRAM, 512KX36, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100

CY7C1370D-167AXIT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCypress Semiconductor
package instructionLQFP, QFP100,.63X.87
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time3.4 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)167 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee4
length20 mm
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Maximum standby current0.07 A
Minimum standby current3.14 V
Maximum slew rate0.275 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperature20
width14 mm
CY7C1370D
CY7C1372D
18-Mbit (512 K × 36/1 M × 18) Pipelined
SRAM with NoBL™ Architecture
18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1370D and CY7C1372D are 3.3 V, 512 K × 36 and
1 M × 18 synchronous pipelined burst SRAMs with No Bus
Latency™ (NoBL logic, respectively. They are designed to
support unlimited true back-to-back read/write operations with
no wait states. The CY7C1370D and CY7C1372D are equipped
with the advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1370D and CY7C1372D are pin compatible and
functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
Write operations are controlled by the byte write selects
(BW
a
–BW
d
for CY7C1370D and BW
a
–BW
b
for CY7C1372D)
and a write enable (WE) input. All writes are conducted with
on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tristated during
the data portion of a write sequence.
Pin-compatible and functionally equivalent to ZBT™
Supports 250-MHz bus operations with zero wait states
Available speed grades are 250, 200, and 167 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte write capability
3.3 V core power supply (V
DD
)
3.3 V/2.5 V I/O power supply (V
DDQ
)
Fast clock-to-output times
2.6 ns (for 250 MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
Available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free
and non Pb-free 65-ball FBGA package
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability – linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
Selection Guide
Description
Maximum access time
Maximum operating current
Maximum CMOS standby current
250 MHz
2.6
350
70
200 MHz
3.0
300
70
167 MHz
3.4
275
70
Unit
ns
mA
mA
Errata:
For information on silicon errata, see
“Errata”
on page 30. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation
Document Number: 38-05555 Rev. *Q
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised October 9, 2013

CY7C1370D-167AXIT Related Products

CY7C1370D-167AXIT CY7C1372D-167AXCT
Description ZBT SRAM, 512KX36, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100 ZBT SRAM, 1MX18, 3.4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
package instruction LQFP, QFP100,.63X.87 LQFP, QFP100,.63X.87
Reach Compliance Code compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A
Maximum access time 3.4 ns 3.4 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK) 167 MHz 167 MHz
I/O type COMMON COMMON
JESD-30 code R-PQFP-G100 R-PQFP-G100
JESD-609 code e4 e4
length 20 mm 20 mm
memory density 18874368 bit 18874368 bit
Memory IC Type ZBT SRAM ZBT SRAM
memory width 36 18
Humidity sensitivity level 3 3
Number of functions 1 1
Number of terminals 100 100
word count 524288 words 1048576 words
character code 512000 1000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 70 °C
organize 512KX36 1MX18
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LQFP LQFP
Encapsulate equivalent code QFP100,.63X.87 QFP100,.63X.87
Package shape RECTANGULAR RECTANGULAR
Package form FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260
power supply 2.5/3.3,3.3 V 2.5/3.3,3.3 V
Certification status Not Qualified Not Qualified
Maximum seat height 1.6 mm 1.6 mm
Maximum standby current 0.07 A 0.07 A
Minimum standby current 3.14 V 3.14 V
Maximum slew rate 0.275 mA 0.275 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3.135 V 3.135 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level INDUSTRIAL COMMERCIAL
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form GULL WING GULL WING
Terminal pitch 0.65 mm 0.65 mm
Terminal location QUAD QUAD
Maximum time at peak reflow temperature 20 20
width 14 mm 14 mm

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