DXT651
60V NPN LOW VCE(sat) TRANSISTOR IN SOT89
Features
BV
CEO
> 60V
I
C
= 3A high Continuous Current
Low saturation voltage V
CE(sat)
< 300mV @ 1A
Complementary PNP Type: DXT751
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
C
SOT89
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pinout
Ordering Information
(Note 4)
Product
DXT651-13
DXT651-13R
Notes:
Marking
KN2
KN2
Reel size (inches)
13
13
Tape width (mm)
12
12
Quantity per reel
2,500
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YWW
KN2
KN2 = Product Type Marking Code
= Manufacturer’s Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
DXT651
Document Number: DS31184 Rev: 5 - 2
1 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DXT651
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Pulse Collector Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
80
60
5
3
6
500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θJA
R
θJL
T
J
, T
STG
Value
1
125
18.2
-55 to +150
Unit
W
°C/W
°C/W
°C
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
Thermal Resistance (°C/W)
Max Power Dissipation (W)
120
100
80
25mm x 25mm 1oz Cu
T
amb
=
25°C
100
25mm x 25mm 1oz Cu
T
amb
=
25°C
Single pulse
D=0.5
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (W)
1.0
0.8
0.6
0.4
0.2
0.0
25mm x 25mm 1oz Cu
Pulse Power Dissipation
0
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
DXT651
Document Number: DS31184 Rev: 5 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DXT651
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
0.1
10
0.1
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
80
60
5
V
V
V
µA
µA
V
V
V
V
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC CHARACTERISTICS
Transition Frequency
Output Capacitance
I
C
= 100
A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100
A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= +100°C
V
EB
= 4V, I
C
= 0
I
C
= 1A, I
B
= 100mA
I
C
= 3A, I
B
= 300mA
I
C
= 1A, I
B
= 100mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 50mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 2A
V
CE
= 5V, I
C
= 100mA, f = 100MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V. I
C
= 500mA,
I
B1
= I
B2
= 50mA
0.08
0.23
0.85
0.8
200
200
185
120
200
35
230
0.3
0.6
1.25
1
300
30
70
100
80
40
140
Switching Times
Notes:
f
T
C
obo
t
on
t
off
MHz
pF
ns
ns
7. Measured under pulsed conditions. Pulse width
≤
300μs. Duty cycle
≤
2%.
2.0
1.8
I
B
= 10mA
350
V
CE
= 2V
300
h
FE
, DC CURRENT GAIN
250
200
150
100
50
0
0.001
I
C
, COLLECTOR CURRENT (A)
TA = 150°C
1.6
1.4
1.2
1.0
0.8
I
B
= 4mA
I
B
= 6mA
I
B
= 8mA
TA = 85°C
TA = 25°C
0.6
0.4
0.2
I
B
= 2mA
TA = -55°C
1
2
3
4
5
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
0.0
0
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain
vs. Collector Current
10
DXT651
Document Number: DS31184 Rev: 5 - 2
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February 2013
© Diodes Incorporated
DXT651
V
BE(ON)
, BASE EMITTER TURN-ON VOLTAGE (V)
0.35
0.3
0.25
0.2
0.15
TA = 150°C
I
C
/I
B
= 10
1.2
V
CE
= 2V
V
CE(SAT)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
0.1
T A = 85°C
TA = 85°C
0.05
0
0.0001
TA = 25°C
TA = -55°C
0.2
0.0
0.0001
TA = 150°C
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
V
BE(SAT)
, BASE EMITTER SATURATION VOLTAGE (V)
1.2
I
C
/I
B
= 10
60
0.8
TA = -55°C
C
obo
, OUTPUT CAPACITANCE (pF)
1.0
50
f = 1MHz
40
0.6
TA = 25°C
TA = 85°C
30
0.4
20
0.2
TA = 150°C
10
0
0
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
15
20
25
30
35 40
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
5
250
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
200
150
100
V
CE
= 5V
f = 100MHz
50
20
40
60
80
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
0
0
DXT651
Document Number: DS31184 Rev: 5 - 2
4 of 6
www.diodes.com
February 2013
© Diodes Incorporated
DXT651
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D1
00
0.2
R
1
C
H
E
H
B1
B
e
8° (4X)
L
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.44
D
4.40
4.60
D1
1.62
1.83
E
2.29
2.60
e
1.50 Typ
H
3.94
4.25
H1
2.63
2.93
L
0.89
1.20
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
X2 (2x)
Y1
Y3
Y
Y2
C
X (3x)
Y4
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
DXT651
Document Number: DS31184 Rev: 5 - 2
5 of 6
www.diodes.com
February 2013
© Diodes Incorporated
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