GT28F640W30BC70 datasheet, PDF

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GT28F640W30BC70: DescriptionFlash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, BGA-56; Categorystorage storage; File Size1MB，98 Pages; ManufacturerIntel; Websitehttp://www.intel.com/

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GT28F640W30BC70 Overview

Flash, 4MX16, 70ns, PBGA56, 0.75 MM PITCH, BGA-56

GT28F640W30BC70 Parametric

Parameter Name	Attribute value
Parts packaging code	BGA
package instruction	0.75 MM PITCH, BGA-56
Contacts	56
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum access time	70 ns
Other features	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	NO
JESD-30 code	R-PBGA-B56
length	9 mm
memory density	67108864 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	8,127
Number of terminals	56
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA56,7X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size	4 words
Parallel/Serial	PARALLEL
power supply	1.8,3 V
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	1 mm
Department size	4K,32K
Maximum standby current	0.000005 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
switch bit	NO
type	NOR TYPE
width	7.7 mm
Base Number Matches	1

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Intel

Wireless Flash Memory (W30)

28F640W30, 28F320W30, 28F128W30

Datasheet

Product Features

■

High Performance Read-While-Write/Erase

■

Flash Architecture

— Burst Frequency at 40 MHz

— 70 ns Initial Access Speed

— 25 ns Page-Mode Read Speed

— 20 ns Burst-Mode Read Speed

— Burst- and Page-Mode in All Blocks and

across All Partition Boundaries

— Burst Suspend Feature

— Enhanced Factory Programming:

3.5 µs per Word Program Time

— Programmable WAIT Signal Polarity

■

Flash Power

— V

= 1.70 V – 1.90 V

— V

CCQ

= 2.20 V – 3.30 V

— Standby Current (130 nm) = 8 µA (typ.)

— Read Current = 7 mA

(4 word burst, typ.)

■

Flash Software

— 5 µs/9 µs (typ.) Program/Erase Suspend

Latency Time

— Intel

Flash Data Integrator (FDI) and

Common Flash Interface (CFI) Compatible

■

Quality and Reliability

— Operating Temperature:

–40 °C to +85 °C

— 100K Minimum Erase Cycles

— 130 nm ETOX™ VIII Process

— 180 nm ETOX™ VII Process

— Multiple 4-Mbit Partitions

— Dual Operation: RWW or RWE

— Parameter Block Size = 4-Kword

— Main block size = 32-Kword

— Top and Bottom Parameter Devices

■

Flash Security

— 128-bit Protection Register: 64 Unique Device

Identifier Bits; 64 User OTP Protection

— Absolute Write Protection with V

at Ground

— Program and Erase Lockout during Power

Transitions

— Individual and Instantaneous Block Locking/

Unlocking with Lock-Down

■

Density and Packaging

— 130 nm: 32Mb, 64Mb, and 128Mb in VF BGA

Package; 64Mb, 128Mb in QUAD+ Package

— 180 nm: 32Mb and 128Mb Densities in VF

BGA Package; 64Mb Density in µBGA*

Package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

— 16-bit Data Bus

The Intel

Wireless Flash Memory (W30) device combines state-of-the-art Intel

Flash

technology to provide the most versatile memory solution for high performance, low power,

board constraint memory applications. The W30 device offers a multi-partition, dual-operation

flash architecture that enables the device to read from one partition while programming or

erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it

possible to achieve higher data throughput rates as compared to single partition devices,

allowing two processors to interleave code execution because program and erase operations can

now occur as background processes.

The W30 device incorporates a new Enhanced Factory Programming (EFP) mode to improve 12

V factory programming performance. This new feature helps eliminate manufacturing

bottlenecks associated with programming high density flash devices. Compare the EFP program

time of 3.5 µs per word to the standard factory program time of 8.0 µs per word and save

significant factory programming time for improved factory efficiency.

Additionally, the W30 device includes block lock-down and programmable WAIT signal

polarity, and is supported by an array of software tools. All these features make this product a

perfect solution for any demanding memory application.

Notice:

This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the lat-

est datasheet before finalizing a design.

290702-010

December 2004

28F320W30, 28F640W30, 28F128W30

Contents

1.0

Introduction

..................................................................................................................9

1.1

1.2

1.3

Document Purpose................................................................................................9

Nomenclature ........................................................................................................9

Conventions ..........................................................................................................9

Overview .............................................................................................................11

Memory Map and Partitioning .............................................................................12

W30 – 130 nm Lithography .................................................................................15

W30 – 180 nm Lithography .................................................................................17

Signal Ballout ......................................................................................................20

Signal Descriptions..............................................................................................22

Absolute Maximum Ratings.................................................................................23

Operating Conditions...........................................................................................23

2.0

Functional Overview

...............................................................................................11

2.1

2.2

3.0

Package Information

...............................................................................................15

3.1

3.2

4.0

Ballout and Signal Descriptions

........................................................................20

4.1

4.2

5.0

Maximum Ratings and Operating Conditions

..............................................23

5.1

5.2

6.0

Electrical Specifications

........................................................................................25

6.1

6.2

DC Current Characteristics .................................................................................25

DC Voltage Characteristics .................................................................................26

Read Operations - 130 nm Lithography ..............................................................27

Read Operations - 180 nm Lithography ..............................................................29

AC Write Characteristics .....................................................................................39

Erase and Program Times ..................................................................................43

Active Power .......................................................................................................44

Automatic Power Savings (APS).........................................................................44

Standby Power ....................................................................................................44

Power-Up/Down Characteristics .........................................................................45

8.4.1 System Reset and RST# ........................................................................45

8.4.2 VCC, VPP, and RST# Transitions ..........................................................45

Power Supply Decoupling ...................................................................................45

Reset Specifications............................................................................................46

AC I/O Test Conditions........................................................................................47

Device Capacitance ............................................................................................48

Bus Operations....................................................................................................48

9.1.1 Read .......................................................................................................48

9.1.2 Burst Suspend........................................................................................49

7.0

AC Characteristics

...................................................................................................27

7.1

7.2

7.3

7.4

8.0

Power and Reset Specifications

........................................................................44

8.1

8.2

8.3

8.4

8.5

8.6

8.7

8.8

9.0

Device Operations

...................................................................................................48

9.1

Datasheet

28F320W30, 28F640W30, 28F128W30

9.2

9.3

9.1.3 Standby .................................................................................................. 50

9.1.4 Reset ...................................................................................................... 50

9.1.5 Write ....................................................................................................... 50

Device Commands .............................................................................................. 51

Command Sequencing........................................................................................ 54

Read Array .......................................................................................................... 55

Read Device ID ................................................................................................... 55

Read Query (CFI)................................................................................................ 56

Read Status Register .......................................................................................... 56

Clear Status Register .......................................................................................... 58

Word Program ..................................................................................................... 58

Factory Programming.......................................................................................... 59

Enhanced Factory Program (EFP) ...................................................................... 60

11.3.1 EFP Requirements and Considerations ................................................. 60

11.3.2 Setup ...................................................................................................... 61

11.3.3 Program ................................................................................................. 61

11.3.4 Verify ...................................................................................................... 61

11.3.5 Exit ......................................................................................................... 62

Program/Erase Suspend and Resume ............................................................... 64

Block Erase ......................................................................................................... 66

Read-While-Write and Read-While-Erase .......................................................... 68

Block Lock Operations ........................................................................................ 69

13.1.1 Lock........................................................................................................ 70

13.1.2 Unlock .................................................................................................... 70

13.1.3 Lock-Down ............................................................................................. 70

13.1.4 Block Lock Status................................................................................... 71

13.1.5 Lock During Erase Suspend .................................................................. 71

13.1.6 Status Register Error Checking.............................................................. 71

13.1.7 WP# Lock-Down Control ........................................................................ 72

Protection Register.............................................................................................. 72

13.2.1 Reading the Protection Register ............................................................ 73

13.2.2 Programing the Protection Register ....................................................... 73

13.2.3 Locking the Protection Register ............................................................. 74

VPP Protection .................................................................................................... 75

Read Mode (RCR[15]) ........................................................................................ 78

First Access Latency Count (RCR[13:11]) .......................................................... 78

14.2.1 Latency Count Settings .......................................................................... 79

WAIT Signal Polarity (RCR[10]) .......................................................................... 79

WAIT Signal Function ......................................................................................... 79

Data Hold (RCR[9]) ............................................................................................. 80

WAIT Delay (RCR[8]) .......................................................................................... 81

10.0

Read Operations

....................................................................................................... 55

10.1

10.2

10.3

10.4

10.5

11.0

Program Operations

............................................................................................... 58

11.1

11.2

11.3

12.0

Program and Erase Operations

.......................................................................... 64

12.1

12.2

12.3

13.0

Security Modes

......................................................................................................... 69

13.1

13.2

13.3

14.0

Set Read Configuration Register

....................................................................... 76

14.1

14.2

14.3

14.4

14.5

14.6

Datasheet

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