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JANTXV2N7224

Description
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
CategoryDiscrete semiconductor    The transistor   
File Size52KB,2 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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JANTXV2N7224 Overview

Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

JANTXV2N7224 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, S-MSFM-P3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.081 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum pulsed drain current (IDM)136 A
Certification statusNot Qualified
GuidelineMILITARY STANDARD (USA)
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Transistor component materialsSILICON
Maximum off time (toff)300 ns
Maximum opening time (tons)225 ns
Base Number Matches1

JANTXV2N7224 Related Products

JANTXV2N7224 JANTX2N7224
Description Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 34 A 34 A
Maximum drain-source on-resistance 0.081 Ω 0.081 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA
JESD-30 code S-MSFM-P3 S-MSFM-P3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material METAL METAL
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 150 W 150 W
Maximum pulsed drain current (IDM) 136 A 136 A
Certification status Not Qualified Not Qualified
Guideline MILITARY STANDARD (USA) MILITARY STANDARD (USA)
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
Maximum off time (toff) 300 ns 300 ns
Maximum opening time (tons) 225 ns 225 ns
Base Number Matches 1 1
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