MRF838A datasheet, PDF - EEWORLD Datasheet

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MRF838A: DescriptionRF Small Signal Bipolar Transistor, 0.6A I(C), Ultra High Frequency Band, Silicon, NPN,; CategoryDiscrete semiconductor The transistor; File Size13KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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MRF838A Overview

RF Small Signal Bipolar Transistor, 0.6A I(C), Ultra High Frequency Band, Silicon, NPN,

MRF838A Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	7.5 pF
Collector-emitter maximum voltage	18 V
Configuration	Single
Minimum DC current gain (hFE)	10
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRPM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

MRF838A Preview

MRF838A

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

MRF838A

is a Common Emitter

Device Designed for Class A, B and C

Amplifier Applications up to 1.0 GHz.

PACKAGE STYLE .205 4L STUD

D

4

3

A

2

1

C

FEATURES INCLUDE:

•

Gold Metallization

•

Emitter Ballasting

•

High Gain

H

B

G

F

E

#8-32UNC

J

MAXIMUM RATINGS

I

C

V

CBO

P

DISS

T

J

T

STG

θ

JC

O

DIM

A

B

C

D

E

F

G

H

I

J

M INIM UM

inches / m m

M AXIM UM

inches / m m

600 mA

36 V

8.75 W @ T

C

= 25 C

-65 Cto +200 C

20 C/W

O

.976 / 24.800

.028 / 0.700

.138 / 3.500

.161 / 4.100

.098 / 2.500

.200 / 5.100

.004 / 0.100

.425 / 10.800

.200 / 5.100

1.000 / 25.4000

.031 / 0.800

.196 / 5.000

.110 / 2.800

.208 / 5.300

.006 / 0.150

.465 / 11.800

2.05 / 5.200

1 & 3 = EMITER

2 = BASE

4 = COLLECTOR

CHARACTERISTICS

SYMBOL

BV

CES

BV

CEO

BV

EBO

h

FE

C

OB

P

G

η

C

I

C

= 10 mA

I

C

= 10 mA

I

E

= 1.0 mA

V

CE

= 5.0 V

T

C

= 25 C

O

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM

36

18

4.0

UNITS

V

---

I

C

= 150 mA

f = 1.0 MHz

P

OUT

= 1.0 W

f = 870 MHz

20

7.5

6.5

50

7.5

V

CB

= 12.5 V

V

CE

= 12.5 V

pF

dB

%

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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