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203CNQ100D

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size114KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

203CNQ100D Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

203CNQ100D Parametric

Parameter NameAttribute value
Objectid1453875951
package instructionROHS COMPLIANT PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationPOWER
Shell connectionANODE AND CATHODE
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-XUFM-X2
Maximum non-repetitive peak forward current2000 A
Number of components2
Phase1
Number of terminals2
Maximum output current100 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER
CPT20080-CPT200100
A
R
G
Baseplate
A=Common Anode
B
Q
N
W
Baseplate
Common Cathode
U
C
H
V
E
Notes:
Baseplate: Nickel plated
copper
Baseplate
D=Doubler
Schottky PowerMod
Dim. Inches
Min.
A
B
C
E
F
G
H
N
Q
R
U
V
W
Millimeters
Min.
Max.
Notes
Max.
F
U
---
3.630
0.800
0.700
0.630
---
0.130
0.120
0.510
0.490
1.375 BSC
---
0.010
---
---
0.275
0.290
3.150 BSC
0.600
---
0.312
0.340
0.180
0.195
---
92.20
17.78
20.32
---
16.00
3.30
3.05
12.45
12.95
34.92 BSC
---
0.25
---
---
6.99
7.37
80.01 BSC
15.24
---
7.92
8.64
4.57
4.95
1/4-20
Dia.
Dia.
Microsemi
Catalog Number
CPT20080*
CPT20090*
CPT200100*
Industry
Part Number
203CNQ080
MBR12080CT
MBR20080CT
203CNQ100
MBR120100CT
MBR200100CT
Working Peak Repetitive Peak
Reverse Voltage Reverse Voltage
80V
90V
100V
80V
90V
100V
Schottky Barrier Rectifier
Guard Ring Protection
200 Amperes/ 80 to 100 Volts
175 C Junction Temperature
Reverse Energy Tested
ROHS Compliant
*Add Suffix A for Common Anode, D for Doubler
Electrical Characteristics
I F(AV) 200 Amps
Average forward current per pkg
I F(AV) 100 Amps
Average forward current per leg
I FSM
2000 Amps
Maximum surge current per leg
Maximum repetitive reverse current per leg I R(OV) 2 Amps
VFM
0.98 Volts
Max peak forward voltage per leg
VFM
.86 Volts
Typical forward voltage per leg
I RM
75 mA
Max peak reverse current per leg
I RM
4.0 mA
Max peak reverse current per leg
CJ
3000 pF
Typical junction capacitance per leg
TC = 135°C, Square wave, R 0JC =0.20°C/W
TC = 135°C, Square wave, R0JC =0.40°C/W
8.3ms, half sine,T J = 175°C
f = 1 KHZ, 25°C, 1µsec square wave
I FM = 200A: J = 25°C*
T
I FM = 200A: J = 175°C*
T
VRRM, TJ = 125°C*
VRRM, TJ = 25°C
VR = 5.0V,TC = 25°C
*Pulse test: Pulse width 300µsec, Duty cycle 2%
Thermal and Mechanical Characteristics
Storage temp range
Operating junction temp range
Max thermal resistance per leg
Max thermal resistance per pkg
Typical thermal resistance (greased)
Terminal Torque
Mounting Base Torque (outside holes)
Mounting Base Torque (center hole)
center hole must be torqued first
Weight
T STG
TJ
R OJC
R OJC
R OCS
-55°C to 175°C
-55°C to 175°C
0.40°C/W Junction to case
0.20°C/W Junction to case
0.08°C/W Case to sink
35-50 inch pounds
30-40 inch pounds
8-10 inch pounds
2.8 ounces (75 grams) typical
www.microsemi.com
January, 2010 - Rev. 4
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