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MBM200GR12

Description
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size53KB,1 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

MBM200GR12 Overview

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES

MBM200GR12 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionFLANGE MOUNT, R-PUFM-X7
Reach Compliance Codeunknown
Maximum collector current (IC)200 A
Collector-emitter maximum voltage1200 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X7
Number of components1
Number of terminals7
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum power dissipation(Abs)1130 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
VCEsat-Max2.8 V
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