MGP5N60E datasheet, PDF - EEWORLD Datasheet

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MGP5N60E: DescriptionInsulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size324KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MGP5N60E Overview

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB

MGP5N60E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
Reach Compliance Code	unknown
Other features	HIGH SPEED
Shell connection	COLLECTOR
Maximum collector current (IC)	6 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE
Gate emitter threshold voltage maximum	8 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	62 W
Maximum power dissipation(Abs)	62 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	60 ns
VCEsat-Max	2.77 V

MGP5N60E Preview

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MGP5N60E/D

Product Preview Data Sheet

Bnsuiated

N4hannel

Gate Bipolar

Wansistor

MGP5N60E

IGBT IN TO-220 t,,

Enhancement Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced

termination scheme to provide an enhanced and reliable high

voltage blocking capability. Its new 600V IGBT technology

specifically suited for applications requiring both a high tempera-

ture shoti circuit capability and a low VCE(on). It also provides fast

switching characteristics and results in efficient operation at high

frequencies. This new E-series introduces an Energy+fficient

and

shod circuit rated device.

Industry Standard TG220 Package

High Speed Eoff: 44 pJ/A typical at 125°C

High Short Circuit Capability – 10 ps minimum at 125°C

Low On-Voltage - 2.OV typical at 3A, 125°C

Robust High Voltage Termination

c ?

‘i.},, ,3,,

,,p,\:,,

\t.j

‘,~,, Y?.

<$.,,,

.$ w ‘:’”

,.\\! ‘.ti’b.~i$l

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,,,

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.*$

,,:.:>,,,,,,;>

*I.*.<,

.,,,,:. >

..,,!

I’>

.$1,,

~:t>,.i.,:.. ‘

‘~ ,,..i ~~

6II

MAXIMUM RATINGS flJ =

25°C unless otherwise noted~f~

‘$S’

:,,

$y~.,.+,h:.

Rating

‘.~:.,

.?.....\,>J$>.

,.....!.,

\rt\ !i,:i!

,,}t ,{,.

Collector–Emitier Voltage

/“i:’,*..

Collector-Gate Voltage (RGE = 1.0 MQ) ,, $*,$$w””

.,;*,L }

‘‘$.~,y.,

Gat*Emitter Voltage — Continuous

.t;j.

}. T\,i\

Collector Current — Continuous @T/%2&C

—

Symbol

VCES

VCGR

VGE

IC25

Icgo

!CM

Value

600

0.50

Unit

Vdc

Adc

Apk

Watis

Wl”c

Operating and Sto~:~~~cfion

*.-

Temperature Range

TJ~Tstg

tsc

R8JC

RgJA

–55 to 150

2.01

260

Ibf*in (1.13 N~m)

“c

‘cm

Shoh Circuit ~j~@d

fime

(VCC =3d$.$$, VGE = 15 Vdc, TJ = 125°C, RG = 20 Q)

...

Ther~PRe~tance

— Junction to Case - IGBT

~,,:.

—

Junction to Ambient

,< ~.>$.

~+i>

,:.:?

,>i,;.> ~

.....>$\ “

+,,$~~d~

Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds

‘c

(1) Pulse width is limited by m=imum junction temperature.

This dwument contains information on a new product. Specifications and information are subject to change without notice.

MOTOROLA

O Motorola, Inc. 1995

ELECTRICAL

CHARACTERISTICS

(T.I = 25°C unless othemise noted)

Symbol

Min

Typ

Max

Unit

Characterlstic

OFF CHARACTERISTICS

CoIlector-t&Emitter Breakdown Voltage

(VGE = OVdc, IC = 250 @de)

Temperature Coefficient (Positive)

Emitter-t&Collector Breakdown Voltage (VGE = OVdc, IEC = 100 mAdc)

Zero Gate Voltage Collector Current

(VCE = 600 Vdc, VGE = OVdc)

(VCE = 600 Vdc, VGE = OVdc, TJ = 125°C)

BVCES

600

—

BVECS

[CES

—

Vdc

—

870

—

100

2500

mV/OC

Vdc

qt~t,,.

>,,./,.r .......

.\.*.

~‘“ ct’$:

Gat~Body Leakage Current (VGE = * 20 Vdc, VCE = OVdc)

ON CHARACTERISTICS (l)

. ..

Collector-t@Emitter O~State Voltage

(VGE = 15 Vdc, Ic = 1.5 Adc)

(VGE = 15 Vdc, Ic = 1.5 Adc, TJ = 125°C)

(VGE = 15 Vdc, Ic = 3 Adc)

Gate Threshold Voltage

(VCE = VGE, Ic = 1 mAdc)

Threshold Temperature Coefficient (Negative)

Forward Transconductance (VCE = 10 Vdc, Ic = 3 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS [1}

I Turtin

Delay Time

(VCE = 25 Vdc, VGE = OVdc,

f = 1.0 MHz)

IGES

—

VCE(on)

,,1,; ‘.:s$:$>,

sty ‘ .*,,

—

&58’;’t~>, 2.06

–

2.77

.’.s,

Vdc

:%tj;~p

,,$‘ <~$~

.* .,Jt.,,,.,

“$~t. ~

,*,

VGE(th)

\p$;@~$;$ 60

“:”’ ‘

‘“*,

..r<

““ , “$.,,,.~.

1.3

9fe,,%>8~, ~—

v ~- “s

,s<. ::,!

Vdc

8.0

—

mV/oC

Mhos

...

\.~:\

.~!~

-f*e;’-

,: ?$,, COes

\.) .$,,, ,.,

$“ ~~

‘b

Cres

....

~$~

.N:

f!?l:,~,

,,,+,.,.,

4$>

-.?,,

M(on)

~Rn

\IAC,IQ,=

3 A$c,

~E$,.:00 }H

;)

b(om

.,$,,...,

*,.l,.,.:

–

—

362

—

–

—

–

tbd

—

Enff

—

0.09

0.14

,,.

TurMff

Gate Charge

$ ‘~$$$+’

.},,

?*,,,,.

\...*bt$

~’:~t$

.::..+.

‘:$\.!a,

~l~j.>

~. ... ‘~,.,,

!),,$\,,\

,.:,:?,J,:,. ‘

‘

Switching Los:~*

.i.i:,y::

‘

(Vcc = 360 Vdc, IC = 3 Adc,

VGE = 15 Vdc)

Eoff

—

–

—

–

0.13

—

lNTERN~~t~A~’AGE INDUCTANCE

... ,.. >,., ,,,

lnte~{tifier

Inductance

~%~mred from the emitter lead 0.251’from package to emitter bond pad)

(1) mlse Test Pulse Widths 300 W, Duty Cycles 2%.

—

7.5

—

Motorola IGBT Device Data

PACKAGE DIMENSIONS

NOTES

1. DIMENSIONING

Y14.5M, 19s2.

2. WWROLLING

AND TOLEMWING

DIMENSION

INCH.

PER ANSI

CASE 221A+6

TO-220AB

Motorola IGBT Device Data

How to reach us

USA /EUROPE: Motorola Literature Distribution;

P.O.~x 2~lz Phoenk, Arizona-.

l+W1-2M7

MFAX RMF~O@email.sps. mot.com - TOUCHTONE(602)2%609

INTERNET http://Design-NH. com

JAPAN: M~n Moto~a Ltd.;TataumWPWLDC, Tmtiktsu OtauM,

6F SdHutauy~~er,

%142 TataumiKotMu, T@o lW, Japan. 0W21~15

HONG KONG MotorolaSemiwtitiora

H.K. Ltd.; 8B Tti Piw Itiuatrid Pti,

51 TW K* Road,Tai

Po,

N.T.,HOW Kong. 652-26629296

M070ROLA

2PHXM7,24

PR[NTED,N

USA

,,,95

,MPER,ALL,THO

2,0,3,,50,

TMOS

YMGM

MGP5N60E/D

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