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ST733C08LHK1L

Description
Silicon Controlled Rectifier, 1900A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC
CategoryAnalog mixed-signal IC    Trigger device   
File Size366KB,10 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

ST733C08LHK1L Overview

Silicon Controlled Rectifier, 1900A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-200AC

ST733C08LHK1L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionDISK BUTTON, O-CEDB-N2
Reach Compliance Codecompliant
Other featuresHIGH SPEED
Shell connectionISOLATED
Nominal circuit commutation break time20 µs
ConfigurationSINGLE
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JEDEC-95 codeTO-200AC
JESD-30 codeO-CEDB-N2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum rms on-state current1900 A
Maximum repetitive peak off-state leakage current75000 µA
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR

ST733C08LHK1L Preview

Previous Datasheet
Index
Next Data Sheet
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
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Previous Datasheet
Index
Next Data
Bulletin I25188
Sheet
ST733C..L SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
940A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST733C..L
940
55
1900
25
20000
20950
2000
1820
400 to 800
10 to 20
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
To Order
Previous Datasheet
ST733C..L Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
Index
Next Data Sheet
V
DRM
/V
RRM
, maximum
repetitive peak voltage
V
V
RSM
, maximum
non-repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
75
04
ST733C..L
08
400
800
900
Current Carrying Capability
Frequency
180
o
el
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
2200
2050
1370
500
50
V
DRM
50
40
I
TM
180
o
el
1900
1660
1070
370
50
50
55
3580
3600
2900
1220
50
V
DRM
-
40
I
TM
100µs
3100
3130
2450
980
50
-
55
6800
3750
2120
960
50
V
DRM
-
40
I
TM
Units
5920
3240
1780
770
50
-
55
V
A/µs
°C
A
10Ω / 0.47µF
10Ω / 0.47µF
10Ω / 0.47µF
On-state Conduction
Parameter
I
T(AV)
Max. average on-state current
@ Heatsink temperature
I
T(RMS)
Max. RMS on-state current
I
TSM
Max. peak, one half cycle,
non-repetitive surge current
ST733C..L
940 (350)
55 (85)
1900
20000
20950
16800
17600
Units Conditions
A
°C
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
A
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
KA
2
√s
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max
I
2
t
Maximum I
2
t for fusing
2000
1820
1410
1290
I
2
√t
Maximum I
2
√t
for fusing
20000
t = 0.1 to 10ms, no voltage reapplied
To Order
Previous Datasheet
ST733C..L Series
Index
Next Data Sheet
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-state Power Loss Characteristics
Fig. 6 - On-state Power Loss Characteristics
Fig. 7 - Maximum Non-repetitive Surge Current
To Order
Fig. 8 - Maximum Non-repetitive Surge Current
Previous Datasheet
ST733C..L Series
1E 5
S nub b e r c ircuit
R s = 1 0 o hm s
C s = 0 .47 µF
V D = 8 0% V DRM
1E 4
Index
S T 73 3C..L S e rie s
T ra p e zo id a l p uls e
T C = 4 0°C
d i/ d t = 50A / µs
S nub b e r c irc uit
R s = 10 o hm s
C s = 0.47 µF
V D = 80% V DRM
Next Data Sheet
ST 733C..L S e rie s
T ra p e zo id a l p uls e
T C = 55°C
d i/ d t = 50A / µs
tp
1000 5 00
1E 3
1 500
2000
25 00
3 000
5000
1E 2
1E 1
400 200 100
50 H z
1000
1500
2000
2500
300 0
500
100
400 200
50 H z
1E 2
1E3
1E 4 1E 1 1
1E 4 1E
1E 2
1E 3
1E 4
P uls e B a s e wid th (µs )
Pu ls e Ba s e wid th (µs)
Fig. 14 - Frequency Characteristics
1E 5
S nub b e r c irc uit
R s = 10 o hm s
C s = 0 .47 µF
V D = 8 0% V DRM
1E 4
50 H z
500
1000
1500
2000
2500
3000
1E 2
1E 3
1E 4 1E 1 1
1 E 4 1E
S T 73 3C..L S e rie s
T ra p e zo id a l p uls e
T C = 4 0°C
d i/ d t = 10 0A / µs
S nub b e r c irc uit
R s = 10 o hm s
C s = 0.47 µF
V D = 80% V DRM
ST 733C..L S e rie s
T ra p e zo id a l p uls e
T C = 55°C
d i/ d t = 100A/ µs
tp
5 00
1E 3
2 500
3 00 0
5 00 0
1E 2
1E 1
100 0
15 00
2 00 0
4 00
2 00 1 00
100 50 H z
400 200
1E 2
1E 3
1E 4
P u ls e B a s e w id th (µ s )
P uls e Ba s e wid th (µs )
Fig. 15 - Frequency Characteristics
1 E5
ST7 33 C ..L Se rie s
Sin u so id a l p u lse
tp
1 E4
3
2
1 E3
0.5
0.4
1 E2
0.3
0 .4
0 .3
1 E1
1 E1
0 .5
1
2
1
5
10
5
3
10
20 jo u le s p e r p u lse
2 0 jo u le s p e r p u lse
tp
ST7 33 C ..L Se rie s
Re c t a n g u la r p u lse
d i/ d t = 50 A / µ s
1 E2
1 E3
1 E4E4 E1
1 1 1 E1
1 E2
1 E3
1 E4
P u lse B a se w id t h ( µ s)
P u lse B a se w id t h ( µ s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
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