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PH28F320B3BD70

Description
Flash, 2MX16, 70ns, PBGA48, LEAD FREE, VFBGA-48
Categorystorage    storage   
File Size1MB,71 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Environmental Compliance
Download Datasheet Parametric View All

PH28F320B3BD70 Overview

Flash, 2MX16, 70ns, PBGA48, LEAD FREE, VFBGA-48

PH28F320B3BD70 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionLEAD FREE, VFBGA-48
Contacts48
Reach Compliance Codecompli
ECCN code3A991.B.1.A
Maximum access time70 ns
Other featuresBOTTOM BOOT BLOCK
startup blockBOTTOM
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length7.286 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size8,63
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8/3.3,3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height1 mm
Department size4K,32K
Maximum standby current0.000005 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitNO
typeNOR TYPE
width6.964 mm
Base Number Matches1
Intel
®
Advanced Boot Block Flash
Memory (B3)
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Datasheet
Product Features
Flexible SmartVoltage Technology
— 2.7 V – 3.6 V read/program/erase
— 12 V V
PP
fast production programming
Intel
®
Flash Data Integrator Software
—Flash Memory Manager
—System Interrupt Manager
—Supports parameter storage, streaming
data (for example, voice)
1.65 V – .5 V or 2.7 V – 3.6 V I/O option
— Reduces overall system power
High Performance
— 2.7 V – 3.6 V: 70 ns max access time
Extended Cycling Capability
—Minimum 100,000 block erase cycles
Optimized Block Sizes
— Eight 8-KB blocks for data, top or
bottom locations
— Up to 127 x 64-KB blocks for code
Automatic Power Savings Feature
—Typical I
CCS
after bus inactivity
Standard Surface Mount Packaging
—48-Ball CSP packages
—40-Lead and 48-Lead TSOP packages
Block Locking
— V
CC
-level control through Write Protect
WP#
Density and Footprint Upgradeable for
common package
—8-, 16-, 32-, and 64-Mbit densities
Low Power Consumption
— 9 mA typical read current
ETOX™ VIII (0.13
µm)
Flash
Technology
—16-Mbit and 32-Mbit densities
Absolute Hardware-Protection
— V
PP
= GND option
— V
CC
lockout voltage
ETOX™ VII (0.18
µm)
Flash Technology
—16-, 32-, and 64-Mbit densities
Extended Temperature Operation
— –40 °C to +85 °C
ETOX ™ VI (0.25µm) Flash Technology
—8-, 16-, and 32-Mbit densities
Automated Program and Block Erase
— Status registers
Bo not use the x8 option for new designs
The Intel
®
Advanced Boot Block Flash Memory (B3) device, manufactured on the Intel 0.13
µm
and 0.18
µm
technologies, is a feature-rich solution at a low system cost. The B3 device in x16 is
available in 48-lead TSOP and 48-ball CSP packages. The x8 option of this product family is
available only in 40-lead TSOP and 48-ball µBGA* packages. For additional information about
this product family, see the Intel website:
http://www.intel.com/design/flash.
Notice:
This specification is subject to change without notice. Verify with your local Intel sales
office that you have the latest datasheet before finalizing a design.
Order Number: 290580, Revision: 020
18 Aug 2005

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