JANTXV2N5667 datasheet, PDF - EEWORLD Datasheet

JANTXV2N5667: DescriptionPower Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size43KB，1 Pages; ManufacturerSolitron Devices Inc.

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Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-5
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	15 W
Maximum power dissipation(Abs)	15 W
Certification status	Qualified
Guideline	MIL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	20 MHz
Base Number Matches	1

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