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2N5667

Description
Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size221KB,2 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
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2N5667 Overview

Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin,

2N5667 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)5 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.4 V
Base Number Matches1
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Index Files: 1516  2159  1101  2340  849  31  44  23  48  18 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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