EEWORLDEEWORLDEEWORLD

Part Number

Search

20MT120UF

Description
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MTP, 16 PIN
CategoryDiscrete semiconductor    The transistor   
File Size695KB,13 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

20MT120UF Overview

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MTP, 16 PIN

20MT120UF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PUFM-X16
Contacts16
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)40 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X16
Humidity sensitivity level1
Number of components4
Number of terminals16
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)900 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1
5/
I27124 rev. D 02/03
20MT120UF
"FULL-BRIDGE" IGBT MTP
Features
Technology
• Positive V
CE(ON)
Temperature Coefficient
• 10µs Short Circuit Capability
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Low Diode V
F
• Square RBSOA
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
• UL approved (File E78996)
UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
V
CES
= 1200V
I
C
= 40A
T
C
= 25°C
Benefits
Applications
• Rugged with UltraFast Performance
• Benchmark Efficiency above 20KHz
• Outstanding ZVS and Hard Switching
Operation
• Low EMI, requires Less Snubbing
• Excellent Current Sharing in Parallel
Operation
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Optimized for Welding, UPS and SMPS
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
I
I
I
I
C
Max
1200
@ T
C
= 25°C
@ T
C
= 106°C
40
20
100
100
@ T
C
= 106°C
25
100
± 20
2500
240
96
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Breakdown Voltage
Continuos Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
CM
LM
F
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
1

20MT120UF Related Products

20MT120UF 20MT120UFPBF
Description Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MTP, 16 PIN Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, MTP, 18 PIN
Is it Rohs certified? incompatible conform to
package instruction FLANGE MOUNT, R-PUFM-X16 FLANGE MOUNT, R-XUFM-P18
Contacts 16 18
Reach Compliance Code unknow compli
Other features UL RECOGNIZED UL APPROVED
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 40 A 40 A
Collector-emitter maximum voltage 1200 V 1200 V
Configuration BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-PUFM-X16 R-XUFM-P18
Number of components 4 4
Number of terminals 16 18
Maximum operating temperature 125 °C 150 °C
Package body material PLASTIC/EPOXY UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 225 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED PIN/PEG
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON
Base Number Matches 1 1
EEWORLD University Hall ---- Zhang Zhang talks 28335
Zhang Zhang Lecture 28335 : https://training.eeworld.com.cn/course/4000...
老白菜 DSP and ARM Processors
Let's discuss how to choose FPGA chip? Thank you
Welcome everyone to discuss :)...
dianlym FPGA/CPLD
Newbie looking for answers.
I just started learning UCSO. Can someone please tell me what the following statement means and what its function is...OS_CPU_SR cpu_sr;...
huchenbo2008 Embedded System
Are there any students from universities in Qingdao? Ocean University, Shandong University of Science and Technology, Qingdao University, Qingdao University of Science and Technology, Agricultural University...
[i=s]This post was last edited by paulhyde on 2014-9-15 09:41[/i] Are there any Qingdao college students on this forum? Please sign up and share your thoughts and doubts about the preparations for the...
owlcjy Electronics Design Contest
There is a physics problem
Guan Guan saw a question like this today: A bear fell into a trap, the trap is 19.617 meters deep, and the falling time is exactly 2 seconds. What color is the bear? A: White, polar bear B: Brown, bro...
okhxyyo Talking
Based on DDS9834 function generator
[i=s] This post was last edited by paulhyde on 2014-9-15 03:50 [/i] Based on the DDS9834 function generator...
huangxianshu Electronics Design Contest

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2666  1196  2079  492  1873  54  25  42  10  38 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号