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BR810DG

Description
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size116KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

BR810DG Overview

Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon,

BR810DG Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDiodes
package instructionR-PSIP-W4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-W4
JESD-609 codee0
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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