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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC4230-4000
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2SC4230-4000

Description
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size417KB，12 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

2SC4230-4000 Overview

Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

2SC4230-4000 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage800 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)8 MHz
Maximum off time (toff)3800 ns
Maximum opening time (tons)500 ns
VCEsat-Max1 V
Base Number Matches1

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SHINDENGEN
Switching Power Transistor
HFX Series
(T2V80HFX)
2A NPN
2SC4230
OUTLINE DIMENSIONS
Case : TO-220
RATINGS
œAbsolute
Maximum Ratings
Item
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Mounting Torque
Unit : mm
Symbol
Tstg
Tj
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
TOR
Conditions
Tc = 25Ž
(Recommended torque : 0.3N¥m)
Ratings
-55`150
150
1200
800
7
2
4
1
2
50
0.5
Ratings
Min 800
Max 0.1
Max 0.1
Max 0.1
Min 8
Min 7
Max 1.0
Max 1.5
Max 2.5
TYP 8
Max 0.5
Max 3.5
Max 0.3
Unit
Ž
Ž
V
V
V
A
A
W
N¥m
œElectrical
Characteristics (Tc=25Ž)
Item
Symbol
Collector to Emitter Sustaining Voltage
V
CEO
(sus)
Collector Cutoff Current
I
CBO
I
CEO
Emitter Cutoff Current
I
EBO
DC Current Gain
h
FE
h
FEL
Collector to Emitter Saturation Voltage
V
CE
(sat)
Base to Emitter Saturation Voltage
V
BE
(sat)
Thermal Resistance
Æjc
Transition Frequency
f
T
Turn on Time
ton
Storage Time
ts
Fall Time
tf
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
Conditions
I
C
= 0.1A
At rated Voltage
At rated Voltage
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 1mA
I
C
= 1A
I
B
= 0.2A
Junction to case
V
CE
= 10V, I
C
= 0.2A
I
C
= 1A
I
B1
= 0.2A, I
B2
= 0.4A
R
L
= 250¶, V
BB2
= 4V
Unit
V
mA
mA
V
V
Ž/W
MHz
Ês

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