UNISONIC TECHNOLOGIES CO., LTD
UT136FE
TRIAC
DESCRIPTION
TRIAC
Glass passivated sensitive gate triacs in a full pack,plastic
envelop, intended for use in general purpose bidirectional
switching and phase control applications, where high sensitivity
is required in all four quadrants
1
TO-220F
SYMBOL
MT2
G
MT1
ORDERING INFORMATION
Ordering Number
Halogen Free
UT136FEG-x-TF3-R
Package
TO-220F
Pin Description
1
2
3
MT1 MT2
G
Packing
Tube
Lead Free
UT136FEL-x-TF3-R
Note: Pin Assignment: G: Gate
UT136FEG-x-TF3-R
(1)Packing Type
(2)Package Type
(3)Peak Voltage
(4)Green Package
(1) T: Tube
(2) TF3: TO-220F
(3) 5: 500V, 6: 600V, 8: 800V
(4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
UTC
UT136FE
Lot Code
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 6
QW-R401-022.C
UT136FE
ABSOLUTE MAXIMUM RATING
PARAMETER
Repetitive Peak Off-State Voltages
UT136FE-5
UT136FE-6
UT136FE-8
SYMBOL
V
DRM
RATINGS
500 (Note2)
600 (Note2)
800
TRIAC
UNIT
V
RMS On-state Current
I
T(RMS)
4
A
Full sine wave, T
HS
≤92C
Non-Repetitive Peak. On-State Current
t =20 ms
25
Full sine wave, T
J
=125C prior to surge, with
I
TSM
A
t =16.7 ms
27
reapplied V
DRM(MAX)
2
2
2
I t For Fusing (t =10 ms)
It
3.1
As
T2 + G+
50
Repetitive Rate of Rise of On-state Current
T2 + G-
50
after Triggering
dI
T
/dt
A/µs
T2 - G-
50
I
TM
=12 A, I
G
=0.2 A, dI
G
/dt=0.2A/µs
T2 - G+
10
Peak Gate Voltage
V
GM
5
V
Peak Gate Current
I
GM
2
A
Peak Gate Power
P
GM
5
W
Average Gate Power (Over any 20ms period)
P
G(AV)
0.5
W
Operating Junction Temperature
T
J
+125
°C
Storage Temperature
T
STG
-40 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac
may switch to the on-state. The rate of rise of current should not exceed 3A/µs.
THERMAL RESISTANCES
SYMBOL
θ
JA
θ
JC
MIN
TYP
55
MAX
5.5
7.2
UNIT
°C/W
°C/W
°C/W
PARAMETER
Thermal resistance Junction to Ambient
In Free Air
Full cycle
Thermal resistance Junction to mounting base
Half cycle
ISOLATION LIMITING VALUE & CHARACTERISTIC
(T
HS
=25C, unless otherwise specified)
SYMBOL
V
ISOL
C
ISOL
12
MIN
TYP
MAX
1500
UNIT
V
pF
PARAMETER
Repetitive peak voltage form all three terminals to external
heatsink (R.H.≤ 65%, clean and dustfree)
Capacitance from MT2 to external heatsink (f =1MHz)
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QW-R401-022.C
UT136FE
STATIC CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
T2 + G+
T2 + G-
V
D
=12 V, I
T
=0.1A
T2 - G-
T2 - G+
T2 + G+
T2 + G-
V
D
=12 V, I
GT
=0.1A
T2 - G-
T2 - G+
V
D
=12 V, I
GT
=0.1A
I
T
=5 A
V
D
=12V, I
T
=0.1A
V
D
=400V, I
T
=0.1A, T
J
=125°C
V
D
=V
DRM(MAX)
, T
J
=125°C
MIN
TYP
MAX
10
10
10
25
15
20
15
20
15
1.7
1.5
0.5
TRIAC
Gate Trigger Current
I
GT
Latching Current
I
L
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
I
H
V
T
V
GT
I
D
0.25
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
DYNAMIC CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
MIN
TYP
50
2
MAX
UNIT
V/µs
µs
PARAMETER
SYMBOL
TEST CONDITIONS
Critical Rate of Rise of Off-State
V
DM
= 67% V
DRM(MAX)
,T
J
=125°C,
Voltage
dV
D
/d
t
Exponential waveform, gate open
circuit
I
TM
=6A,V
D
= V
DRM(MAX)
, I
G
=0.1A,
Gate Controlled Turn-On Time
t
GT
dI
G/
dt=5A/μs
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QW-R401-022.C
UT136FE
TYPICAL CHARACTERISTICS
Maximum On -State Dissipation. P
Tot
vs. RMS On-
State Current, I
T(RMS)
, Where α=conduction Angle
8
7
6
5
4
3
2
1
0
0
1
3
2
I
T(RMS)
(A)
4
5
α
P
TOP
(W)
α
Tsp(max) (°C)
81
86.5
α=180
92
α=120
α=90
97.5
α=60
α=30
TRIAC
Maximum Permissible RMS Current I
T(RMS)
vs.
Versus Heatsink Temperature Ths
5
4
3
2
1
0
I
T(RMS)
(A)
92°C
103
108.5
114
119.5
125
-50
0
50
Ths (°C)
100
150
1000
Maximum Permissible Non-Repetitive
Peak On-State Current I
TSM
vs. Pulse
Width t
p
, for Sinusoidal Currents,
t
p
≤20ms
I
TSM
(A)
I
T
dI
T
/dt limit
I
TSM
Maximum Permissible Repetitive RMS On-State
Current I
T(RMS)
vs. Versus Surge Duration, for
Sinusoidal Currents, f=50Hz, Ths≤92°C
I
T(RMS)
(A)
12
time
T
T
J
initial=25°Cmax
10
8
6
100
T2-G+ quadrant
4
2
10
10us
100us
1ms
T (s)
10ms 100ms
0
0.01
0.1
1
Surge Duration (S)
10
Maximum Permissible Non-Repetitive
Peak On-State Current I
TSM
vs. Number of
Cycles, for Sinusoidal Currents, f=50Hz
30
25
20
15
10
5
0
1
10
100
1000
I
TSM
(A)
I
T
I
TSM
time
T
T
J
initial=25°Cmax
Normalised Gate Trigger Voltage
V
GT
(T
J
)/V
GT
(25°C) vs. Junction Temperature T
J
V
GT
(T
J
)
V
GT
(25°C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
0
Number of Cycles at 50Hz
50
T
J
(°C)
100
150
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QW-R401-022.C
UT136FE
TYPICAL CHARACTERISTICS (Cont.)
Normalised Gate Trigger Current
I
GT
(T
J
)/I
GT
(25°C) vs. Junction
I
GT
(T
J
)
Temperature T
J
I
GT
(25°C)
T2+G+
T2+G-
T2-G-
T2-G+
Normalised Latching Current
I
L
(T
J
)/I
L
(25°C) vs. Junction
Temperature T
J
I
L
(T
J
)
I
L
(25°C)
TRIAC
3
2.5
2
1.5
1
0.5
3
2.5
2
1.5
1
0.5
0
-50
0
50
T
J
(°C)
100
150
0
-50
0
50
T
J
(°C)
100
150
Normalised Holding Current I
H
(T
J
)/I
H
(25°C),
vs. Junction Temperature T
J
I
H
(T
J
)
I
H
(25°C)
3
2.5
2
1.5
1
0.5
0
-50
0
50
T
J
(°C)
Transient Thermal Impedance Z
th j-mb
vs.Pulse Width t
p
10
Z
th j-mb
(K/W)
With heatsink compound
Without heatsink compound
Typical and Maximum
On-state Characteristic
I
T
(A)
T
J
=25°C
T
J
=125°C
max
typ
V
OUT
=1.27V
Rs=0.091 Ohms
12
10
8
6
4
2
100
150
0
0
0.5
1
1.5
V
T
(V)
Typical, Critical Rate of Rise of Off-State
Voltage, dV
D
/dt Versus Junction
temperature T
J
dV
D
/dt(V/us)
1000
2
2.5
3
1
unidirectional
bidirectional
100
0.01
P
D
0.001
10us 0.1ms 1ms 10ms 0.1s
t
p
(s)
t
p
t
1s
10s
10
1
0
50
T
J
(°C)
100
150
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