RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | conform to |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.05 A |
| Collector-based maximum capacity | 1.7 pF |
| Collector-emitter maximum voltage | 12 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| highest frequency band | VERY HIGH FREQUENCY BAND |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 125 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.35 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 700 MHz |
| Base Number Matches | 1 |
| 2N3663 | 2N3564 | 2N3417 | 2N3605 | 2N2712 | 2N3395 | 2N3396 | 2N3397 | 2N2924 | |
|---|---|---|---|---|---|---|---|---|---|
| Description | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | Small Signal Bipolar Transistor, 0.05A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.2A I(C), 14V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 18V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
| package instruction | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compli | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.05 A | 0.05 A | 0.1 A | 0.2 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| Collector-emitter maximum voltage | 12 V | 15 V | 50 V | 14 V | 18 V | 25 V | 25 V | 25 V | 25 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 20 | 20 | 180 | 30 | 75 | 150 | 90 | 55 | 150 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 125 °C | 125 °C | 160 °C | 150 °C | 125 °C | 125 °C | 125 °C | 125 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.35 W | 0.2 W | 0.36 W | 0.2 W | 0.36 W | 0.2 W | 0.2 W | 0.2 W | 0.62 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Collector-based maximum capacity | 1.7 pF | 3.5 pF | - | 6 pF | 12 pF | 10 pF | 10 pF | 10 pF | 10 pF |
| Nominal transition frequency (fT) | 700 MHz | 400 MHz | - | 300 MHz | 80 MHz | - | - | - | 100 MHz |
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