BTS113 datasheet, PDF - EEWORLD Datasheet

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BTS113: DescriptionPOWER, FET; Categorysemiconductor Discrete semiconductor; File Size312KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BTS113 Overview

POWER, FET

BTS113 Parametric

Parameter Name	Attribute value
state	ACTIVE
Transistor type	GENERAL PURPOSE POWER

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TEMPFET

BTS 113A

Features

N channel

Logic level

Enhancement mode

Temperature sensor with thyristor characteristic

The drain pin is electrically shorted to the tab

Type

BTS 113A

60 V

11.5 A

DS(on)

0.17

Ω

Package

TO-220AB

Ordering Code

C67078-S5015-A2

Maximum Ratings

Parameter

Drain-source voltage

Drain-gate voltage,

= 20 kΩ

Gate-source voltage

Continuous drain current,

= 25

°C

ISO drain current

= 85 ˚C,

= 10 V,

= 0.5 V

Pulsed drain current,

Short circuit current,

Symbol

Values

11.5

2.2

400

– 55 ... + 150

55/150/56

K/W

≤

3.1

≤

°C

–

Unit

DGR

D-ISO

D puls

SCmax

tot

stg

–

= 25

°C

= – 55 ... + 150

°C

Short circuit dissipation,

= – 55 ... + 150

°C

Power dissipation

Operating and storage temperature range

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Thermal resistance

Chip-case

Chip-ambient

th JC

th JA

Semiconductor Group

04.97

BTS113 Related Products

	BTS113	BTS113A	C67078-S5015-A2
Description	POWER, FET	POWER, FET	POWER, FET
state	ACTIVE	-	ACTIVE
Transistor type	GENERAL PURPOSE POWER	-	GENERAL PURPOSE POWER

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