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2SK2489-4072

Description
Power Field-Effect Transistor, 10A I(D), 180V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size82KB,1 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
Download Datasheet Parametric View All

2SK2489-4072 Overview

Power Field-Effect Transistor, 10A I(D), 180V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, STO-220, 3 PIN

2SK2489-4072 Parametric

Parameter NameAttribute value
Parts packaging codeSFM
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage180 V
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
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