GI910 thru GI917
Vishay Semiconductors
formerly General Semiconductor
Medium-Switching Plastic Rectifier
DO-201AD
Reverse Voltage
500 to 800 V
Forward Current
3.0 A
Features
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High surge current capability
• Construction utilizes void-free molded plastic technique
• High forward current operation
• Fast switching for high efficiency
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
Case:
JEDEC DO-201AD, molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 oz., 1.1 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13" reel, 5.6K per box
23/1K per Ammo. mag., 9K per box
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
GI910
GI911
GI912
GI914
GI916
GI918
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=90°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Typical thermal resistance
(1)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
ΘJA
R
ΘJL
T
J
, T
STG
50
35
50
100
70
100
200
140
200
3.0
100
22
8.0
400
280
400
600
420
600
800
560
800
V
V
V
A
A
°C/W
°C
Operating junction and storage temperature range
-50 to +150
Electrical Characteristics
Parameter
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
GI910
GI911
GI912
GI914
GI916
GI918
Unit
Maximum instantaneous forward voltage at 3.0A
9.4A, T
J
=175°C
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=100°C
V
F
I
R
t
rr
I
RM(REC)
C
J
1.25
1.10
10
300
750
2.0
28
V
µA
ns
A
pF
Maximum reverse recovery time at
I
F
=1.0A, V
R
=30V, di/dt=50A/µs, I
rr
=10% I
RM
Maximum reverse recovery time at
I
F
=1.0A, V
R
=30V, di/dt=50A/µs, I
rr
=10% I
RM
Typical junction capacitance at 4.0V, 1MHz
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, with both leads equally heat sink
Document Number 88631
22-Mar-02
www.vishay.com
1
GI910 thru GI917
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curves
Average Forward Rectified Current (A)
4.0
Fig. 2 – Maximum Peak Forward
Surge Current
200
Peak Forward Surge Current (A)
I
(pk)
I
(AV)
=
π
0.375" (9.5mm)
Lead Length
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
T
J
= 25°C
Non-Repetitive
3.0
0.8 x 0.8 x 0.40"
(20 x 20 x 1mm)
Copper Heatsinks
Capacitive Load
I
(pk)
5.0
=
10
I
(AV)
20
2.0
T
J
= 150°C
1.0
Repetitive
10
0
30
50
70
90
110
130
150
170
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
100
Fig. 4 – Typical Reverse
Characteristics
10
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
T
J
= 100°C
10
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
1
1
T
J
= 50°C
0.1
T
J
= 25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
100
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88631
22-Mar-02
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