BSS 124
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
•
V
GS(th)
= 1.5 ...2.5 V
Pin 1
G
Type
BSS 124
Type
BSS 124
Pin 2
D
Marking
SS 124
Pin 3
S
V
DS
400 V
I
D
0.12 A
R
DS(on)
28
Ω
Package
TO-92
Ordering Code
Q67000-S172
Tape and Reel Information
E6288
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
Symbol
Values
400
400
Unit
V
V
DS
V
DGR
R
GS
= 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
V
GS
V
gs
I
D
±
14
±
20
A
0.12
T
A
= 37 °C
DC drain current, pulsed
I
Dpuls
0.48
T
A
= 25 °C
Power dissipation
P
tot
1
W
T
A
= 25 °C
Semiconductor Group
1
12/05/1997
BSS 124
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Values
-55 ... + 150
-55 ... + 150
≤
125
E
55 / 150 / 56
K/W
Unit
°C
T
j
T
stg
R
thJA
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Values
typ.
max.
Unit
V
(BR)DSS
400
-
2
0.1
8
10
16
-
2.5
V
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
Gate threshold voltage
V
GS(th)
1.5
V
GS=
V
DS,
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
1
50
µA
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 400 V,
V
GS
= 0 V,
T
j
= 125 °C
Gate-source leakage current
I
GSS
-
100
nA
Ω
-
28
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
R
DS(on)
V
GS
= 10 V,
I
D
= 0.12 A
Semiconductor Group
2
12/05/1997
BSS 124
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Transconductance
Values
typ.
max.
Unit
g
fs
0.1
0.19
90
10
4
-
S
pF
-
120
15
6
ns
-
5
8
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 0.12 A
Input capacitance
C
iss
C
oss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Rise time
t
r
-
10
15
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Turn-off delay time
t
d(off)
-
18
25
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Fall time
t
f
-
15
20
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 0.21 A
R
G
= 50
Ω
Semiconductor Group
3
12/05/1997
BSS 124
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
Reverse Diode
Inverse diode continuous forward current
I
S
T
A
= 25 °C
Inverse diode direct current,pulsed
typ.
max.
Unit
A
-
-
-
-
0.85
0.12
0.48
V
-
1.3
I
SM
V
SD
T
A
= 25 °C
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 0.24 A
Semiconductor Group
4
12/05/1997
BSS 124
Power dissipation
P
tot
=
ƒ
(T
A
)
Drain current
I
D
=
ƒ
(T
A
)
parameter:
V
GS
≥
10 V
0.13
A
0.11
1.2
W
1.0
P
tot
0.9
0.8
0.7
I
D
0.10
0.09
0.08
0.07
0.6
0.06
0.5
0.4
0.3
0.2
0.1
0.0
0
20
40
60
80
100
120
°C
160
0.05
0.04
0.03
0.02
0.01
0.00
0
20
40
60
80
100
120
°C
160
T
A
T
A
Safe operating area
I
D
=f(V
DS
)
parameter :
D
= 0.01,
T
C
=25°C
Drain-source breakdown voltage
V
(BR)DSS
=
ƒ
(T
j
)
480
V
460
V
(BR)DSS
450
440
430
420
410
400
390
380
370
360
-60
-20
20
60
100
°C
160
T
j
Semiconductor Group
5
12/05/1997
京公网安备 11010802033920号
EEWORLD
