BCW66G
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
Top View
Mounting Pad Layout
0.031 (0.8)
Pin Configuration
1.
Base
2.
Emitter
3.
Collector
0.035 (0.9)
0.079 (2.0)
1
2
max. .004 (0.1)
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
0.037 (0.95)
0.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Marking Code:
EG
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Features
• NPN Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low
frequency applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary type, BCW68G PNP
transistor is recommended.
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current
Base Current (DC)
Peak Base Current
Power Dissipation, T
S
= 79°C
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Soldering Point
Note:
(1) Mounted on FR-4 printed-ciruit board.
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
STG
R
θJA
R
θJS
Value
45
75
5.0
800
1.0
100
200
330
150
–65 to +150
≤
285
(1)
≤
215
Unit
V
V
V
mA
A
mA
mA
mW
°C
°C
°C/W
°C/W
Document Number 88172
09-May-02
www.vishay.com
1
BCW66G
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Parameter
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100µA
at V
CE
= 1V, I
C
= 10mA
at V
CE
= 1V, I
C
= 100mA
at V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
Collector-Base Breakdown Voltage
at I
C
= 10µA, I
B
= 0
Emitter-Base Breakdown Voltage
at I
E
= 10µA, I
C
= 0
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
at V
CB
= 45V, I
E
= 0, T
A
= 150°C
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
Gain-Bandwidth Product
at V
CE
= 5V, I
C
= 50mA, f = 20MHz
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
Note:
(1) Pulse test: t
≤
300µs, D = 2%
Ratings at 25°C ambient temperature unless otherwise specified.
Symbol
Min.
TYP.
Max.
Unit
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V(
BR)CEO
V(
BR)CBO
V(
BR)EBO
I
CBO
I
CBO
I
EBO
50
110
160
60
–
–
–
–
45
75
5
–
–
250
–
–
–
–
–
–
–
–
–
–
400
–
0.3
0.7
1.25
2
–
–
–
–
–
–
–
V
V
V
V
V
V
V
–
–
–
–
–
–
20
20
20
nA
µA
nA
f
T
C
CB
C
EB
–
–
–
170
6
60
–
–
–
MH
Z
pF
pF
www.vishay.com
2
Document Number 88172
09-May-02
BCW66G
Vishay Semiconductors
formerly General Semiconductor
Fig. 1 - Switching Waveforms
INPUT
10%
90%
t
on
t
off
10%
90%
OUTPUT
10%
t
d
t
r
t
s
t
f
90%
Document Number 88172
09-May-02
www.vishay.com
3
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