2SK2029-01L datasheet, PDF - EEWORLD Datasheet

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2SK2029-01L: DescriptionPower Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3; CategoryDiscrete semiconductor The transistor; File Size218KB，2 Pages; ManufacturerFuji Electric Co., Ltd.

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2SK2029-01L Overview

Power Field-Effect Transistor, 3A I(D), 900V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3

2SK2029-01L Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
Other features	HIGH VOLTAGE
Configuration	SINGLE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (Abs) (ID)	3 A
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK2029-01L,S

FAP-IIA Series

> Features

-

High Speed Switching

Low On-Resistance

No Secondary Breakdown

Low Driving Power

High Voltage

V

GS

= ± 30V Guarantee

Avalanche Proof

N-channel MOS-FET

900V

4Ω

3A

60W

> Outline Drawing

> Applications

-

Switching Regulators

UPS

DC-DC converters

General Purpose Power Amplifier

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings (T

C

=25°C),

unless otherwise specified

Item

Drain-Source-Voltage

Drain-Gate-Voltage (R

GS

=20KΩ)

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Max. Power Dissipation

Operating and Storage Temperature Range

Symbol

V

DS

V

DGR

I

D

I

D(puls)

V

GS

P

D

T

ch

T

stg

Rating

900

3

12

±30

60

150

-55 ~ +150

Unit

V

A

V

W

°C

> Equivalent Circuit

- Electrical Characteristics (T

C

=25°C),

unless otherwise specified

Item

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t

on

(t

on

=t

d(on)

+t

r

)

Turn-Off-Time t

off

(t

on

=t

d(off)

+t

f

)

Avalanche Capability

Continous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

Symbol

V

(BR)DSS

V

GS(th)

I

DSS

I

R

g

C

t

I

V

t

Q

GSS

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

AV

DR

DRM

SD

rr

Test conditions

I

D

=1mA

V

GS

=0V

I

D

=1mA

V

DS=

V

GS

V

DS

=900V

T

ch

=25°C

V

GS

=0V

T

ch

=125°C

V

GS

=±30V

V

DS

=0V

I

D

=1,5A

V

GS

=10V

I

D

=1,5A

V

DS

=25V

V

DS

=25V

V

GS

=0V

f=1MHz

V

CC

=600V

I

D

=3A

V

GS

=10V

R

GS

=10

Ω

T

ch

=25°C

L = 100µH

Min.

900

2,5

Typ.

3,0

10

0,2

10

2,5

4

1000

90

25

20

10

60

15

Max.

3,5

500

1,0

100

4,0

1500

135

40

30

15

90

25

3

12

1,47

2

3

I

F

=2xI

DR

V

GS

=0V T

ch

=25°C

I

F

=I

DR

V

GS

=0V

-dI

F

/dt=100A/µs T

ch

=25°C

0,98

400

2,5

Unit

V

µA

mA

nA

Ω

S

pF

ns

A

V

ns

µC

- Thermal Characteristics

Item

Thermal Resistance

Symbol

R

th(ch-a)

R

th(ch-c)

Test conditions

channel to air

channel to case

Min.

Typ.

Max.

125

2,08

Unit

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

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