BAS316 datasheet, PDF - EEWORLD Datasheet

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BAS316: Description0.2A,81V,Surface Mount Small Signal Switching Diodes, Single, 100V, 0.25A, 1.25V, 0.15A, 4A, 1uA; File Size151KB，4 Pages; ManufacturerGalaxy Microelectronics

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BAS316 Overview

0.2A,81V,Surface Mount Small Signal Switching Diodes, Single, 100V, 0.25A, 1.25V, 0.15A, 4A, 1uA

BAS316 Parametric

Parameter Name	Attribute value
Maker	Galaxy Microelectronics
Parts packaging code	SOD-323
package instruction	R-PDSO-G2
Reach Compliance Code	unknown
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	0.4 W
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.004 µs
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
VRRM (V) max	100
IF (A) max	0.25
VF (V) max	1.25
Condition1_IF (A)	0.15
IFSM (A) max	4
IR (uA) max	1
Condition2_VR (V)	75
trr (ns) max	4
AEC Qualified	No
Maximum operating temperature	150
Minimum operating temperature	-65
MSL level	1
Is it lead-free?	Yes
Comply with Reach	Yes
RoHS compliant	Yes
ECCN code	EAR99
Package Outlines	SOD-323

BAS316 Preview

Production specification

Silicon Epitaxial Planar Diode

FEATURES



Very small plastic SMD package

High switching speed:max.4ns

Continuous reverse voltage:max.100v

Repetitive peak reverse voltage:max.100v

Repetitive peak forward current:max.500mA

BAS316

Pb

Lead-free

APPLICATIONS



Surface mount fast switching diode

SOD-323

ORDERING INFORMATION

Type No.

BAS316

Marking

A6

Package Code

SOD-323

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Characteristic

Repetitive peak reverse voltage

Continuous Reverse Voltage

Continuous forward Current

Repetitive peak forward current

Non-Repetitive peak forward current

t=1μs

t=1ms

t=1s

Symbol

V

RRM

V

R

I

F

I

FRM

I

FSM

P

d

T

j

,T

STG

R

thj-s

R

thj-A

R

thj-c

Value

100

250

500

4

1

0.5

400

-65 to +150

150

500

210

Unit

V

mA

A

mW

℃

℃/W

Power Dissipation, Ts≤90℃

Junction and Storage Temperature Rage

Thermal resistance from junction to solder point

Thermal resistance from junction to ambient

Thermal resistance from junction to

case

B013

Rev.B

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Production specification

Silicon Epitaxial Planar Diode

BAS316

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Symbol

V

(BR)R

V

F

Min

100

Max

-

0.715

0.855

1.0

1.25

-

1.0

0.03

1.5

4.0

Unit

V

Test Condition

I

R

=100μA

I

F

=1.0mA

I

F

=10mA

I

F

=50mA

I

F

=150mA

V

R

=75V

V

R

=25V

V

R

=0,f=1.0MHz

I

F

=I

R

=10mA,R

L

=100Ω

Reverse Current

Capacitance between terminals

Reverse Recovery Time

I

R

C

T

t

rr

μA

pF

ns

TYPICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

B013

Rev.B

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Production specification

Silicon Epitaxial Planar Diode

BAS316

PACKAGE OUTLINE

Plastic surface mounted package

SOD-323

K

A

SOD-323

C

Dim

A

B

Min

1.60

1.20

0.80

0.25

0.22

0.02

0.05

2.55

Max

1.80

1.40

0.90

0.35

0.42

0.1

0.15

2.75

C

D

E

D

H

E

J

H

J

K

All Dimensions in mm

B013

Rev.B

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Production specification

Silicon Epitaxial Planar Diode

SOLDERING FOOTPRINT

0.63

BAS316

0.83

1.60

2.85

Unit

：mm

PACKAGE INFORMATION

Device

BAS316

Package

SOD-323

Shipping

3000/Tape&Reel

B013

Rev.B

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