J.£.ii£tj ^icmi-donauctoi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA1072
DESCRIPTION
• High Collector-Emitter Breakdown vbltage-
V
(
BR)CEo=-120V(Min)
• Fast Switching Speed
• Wide Area of Safe Operation
• Complement to Type 2SC2522
APPLICATIONS
• High frequency power amplifier
• Audio power amplifiers
• Switching regulators
• DC-DC converters
3
I
PIN 1. BASE
2. EMITTER
3. COLLECT OR (CASE)
^
TV
|
TO-3 package
r
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
A
--
,,.
1
1
.1
_,
PL
t
C
V-.
VCBO
Collector-Base Voltage
i*rJr^
k-3-—-4
">\
^/
:
/
5
1
ij
-120
V
/dT:^
-nn
DIM
A
B
C
D
E
§
H
K
L
N
Q
U
V
]
^
1
t
B
VCEO
Collector-Emitter Voltage
-120
V
f
VEBO
Emitter-Base Voltage
-7
V
nun
MIN
MAX
3300
25,30 J6.6?
?80
8.50
0,90
1 tO
1,40
1.60
1092
546
13,50
1123
1675 1705
19.40 1962
4.00
420
30 20
3000
430
450
Ic
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=25'C
-12
A
PC
120
W
Tj
Junction Temperature
150
r
'C
Tstg
Storage Temperature Range
-65-150
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished hy NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
to press, I hmever. N.I Somi-Comhictors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placine orders.
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25°C
unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain — Bandwidth Product
CONDITIONS
lc= -1mA; RBE= °°
l
c
= -50u A; I
E
= 0
IE- -50u A ; l
c
= 0
l
c
= -5A; I
B
= -0.5A
MIN
2SA1072
TYP.
MAX
UNIT
V
V{BR)CEO
-120
-120
-7
V(BR)CBO
V
V(BR)EBO
V
VcE(sat)
-1.8
-1.7
-50
V
VeE(on)
lc= -5A; VCE= -5V
V
CB
=-120V; I
E
=0
V
C
E=-120V;R
B
E=
V
EB
= -7V; l
c
= 0
lc= -1A; V
CE
= -5V
l
c
= -7A; V
CE
= -5V
l
E
=0;V
C
B=-10V;f= 1.0MHz
lc=-1A;VcE=-10V;f= 10MHz
60
V
ICBO
u A
mA
ICEO
ro
-1
IEBO
-50
uA
hpE-1
200
hFE-2
40
COB
300
PF
fr
60
MHz
Switching Times
Rise Time
Storage Time
Fall Time
l
c
= -7.5A; l
B
i= -I
B
2= -0.75A;
R
L
=4n
0.15
U s
t
r
tstg
0.5
M s
M s
tf
0.11
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