ADVANCE INFORMATION
HAL 815
The sensor is designed for hostile industrial and auto-
motive applications and operates with typically 5 V
supply voltage in the ambient temperature range from
−40
°C up to 150 °C. The HAL 815 is available in the
very small leaded package TO-92UT.
Programmable Linear Hall Effect Sensor
1. Introduction
The HAL 815 is a new member of the Micronas family
of programmable linear Hall sensors. As an extension
to the HAL 800, it offers open-circuit, as well as over-
voltage and undervoltage detection and individual pro-
gramming of different sensors which are in parallel to
the same supply voltage.
The HAL 815 is an universal magnetic field sensor with
a linear output based on the Hall effect. The IC is
designed and produced in sub-micron CMOS technol-
ogy and can be used for angle or distance measure-
ments if combined with a rotating or moving magnet.
The major characteristics like magnetic field range,
sensitivity, output quiescent voltage (output voltage at
B = 0 mT), and output voltage range are programma-
ble in a non-volatile memory. The sensor has a ratio-
metric output characteristic, which means that the out-
put voltage is proportional to the magnetic flux and the
supply voltage.
The HAL 815 features a temperature-compensated
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, a D/A converter
with output driver, an EEPROM memory with redun-
dancy and lock function for the calibration data, a
serial interface for programming the EEPROM, and
protection devices at all pins. The internal digital signal
processing is of great benefit because analog offsets,
temperature shifts, and mechanical stress do not
degrade the sensor accuracy.
The HAL 815 is programmable by modulating the sup-
ply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input sig-
nal (like mechanical angle, distance, or current). Indi-
vidual adjustment of each sensor during the cus-
tomer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be com-
pensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.
In addition, the temperature compensation of the Hall
IC can be fit to all common magnetic materials by pro-
gramming first and second order temperature coeffi-
cients of the Hall sensor sensitivity. This enables oper-
ation over the full temperature range with high
accuracy.
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
1.1. Major Applications
Due to the sensor’s versatile programming character-
istics, the HAL 815 is the optimal system solution for
applications such as:
– contactless potentiometers,
– angle sensors,
– distance measurements,
– magnetic field and current measurement.
1.2. Features
– high-precision linear Hall effect sensor with
ratiometric output and digital signal processing
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– open-circuit (ground and supply line break detec-
tion), overvoltage and undervoltage detection
– for programming an individual sensor within several
sensors in parallel to the same supply voltage, a
selection can be done via the output pin
– to enable programming of an individual sensor
amongst several sensors running parallel to the
same supply voltage, each sensor can be selected
via its output pin
– temperature characteristics are programmable for
matching all common magnetic materials
– programmable clamping function
– programming through a modulation of the supply
voltage
– operates from
−40
°C up to 150 °C
ambient temperature
– operates from 4.5 V up to 5.5 V supply voltage in
specification and functions up to 8.5 V
– total error < 2.0% over operating voltage range and
temperature range
– operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– overvoltage and reverse-voltage protection at all pins
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
Micronas
3
HAL 815
1.3. Marking Code
The HAL 815 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Type
A
HAL 815
815A
Temperature Range
K
815K
E
815E
1.6. Solderability
ADVANCE INFORMATION
Package TO-92UT: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code printed on the package labels, even in
environments as extreme as 40 °C and 90% relative
humidity.
1.4. Operating Junction Temperature Range (T
J
)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
J
).
A:
TJ =
−40
°C to +170 °C
K:
TJ =
−40
°C to +140 °C
E:
TJ =
−40
°C to +100 °C
The relationship between ambient temperature (T
A
)
and junction temperature is explained in Section 4.5.
on page 18.
1.7. Pin Connections and Short Descriptions
Pin
No.
1
2
3
Pin Name
V
DD
GND
OUT
OUT
Type
IN
Short Description
Supply Voltage and
Programming Pin
Ground
Push Pull Output
and Selection Pin
1.5. Hall Sensor Package Codes
1
HALXXXPA-T
Temperature Range: A, K, or E
Package: UT for TO-92UT
Type: 815
Example:
HAL815UT-K
→
Type:
815
→
Package:
TO-92UT
→
Temperature Range: T
J
=
−40°C
to +140°C
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Ordering Codes for
Hall Sensors”.
V
DD
OUT
3
2
GND
Fig. 1–1:
Pin configuration
4
Micronas
ADVANCE INFORMATION
HAL 815
analog output is switched off during the communica-
tion.
Several sensors in parallel to the same supply and
ground line can be programmed individually. The
selection of each sensor is done via its output pin.
The open-circuit detection provides a defined output
voltage if the V
DD
or GND line is broken. Internal tem-
perature compensation circuitry and the choppered off-
set compensation enables operation over the full tem-
perature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
2. Functional Description
2.1. General Function
The HAL 815 is a monolithic integrated circuit which
provides an output voltage proportional to the mag-
netic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior).
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM regis-
ters, converted to an analog voltage with ratiometric
behavior, and stabilized by a push-pull output transis-
tor stage. The function and the parameters for the DSP
are explained in Section 2.2. on page 7.
The setting of the LOCK register disables the program-
ming of the EEPROM memory for all time. This regis-
ter cannot be reset.
HAL
815
8
V
DD
(V)
7
6
5
V
DD
V
OUT
(V)
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulat-
ing the supply voltage (see Fig. 2–1). In the supply
voltage range from 4.5 V up to 5.5 V, the sensor gener-
ates an analog output voltage. After detecting a com-
mand, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
V
DD
GND
OUT
digital
analog
Fig. 2–1:
Programming with V
DD
modulation
V
DD
Internally
stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Oscillator
Open-circuit,
Overvoltage,
Undervoltage
Detection
Protection
Devices
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
D/A
Converter
Analog
Output
100
Ω
OUT
EEPROM Memory
Supply
Level
Detection
Lock Control
GND
Digital
Output
10 kΩ
Fig. 2–2:
HAL 815 block diagram
Micronas
5
Analog electronics
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