Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1077
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SC2527
·High
transition frequency
·Excellent
safe operating area
APPLICATIONS
·High-frequency
power amplifier
·Audio
power amplifiers
·Switching
regulators
·DC-DC
converters
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-7
-10
60
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-1mA ,R
BE
=∞
I
C
=-50μA ,I
E
=0
I
E
=-50μA ,I
C
=0
I
C
=-5A; I
B
=-0.5A
I
C
=-5A ; V
CE
=-5V
V
CB
=-120V; I
E
=0
V
CE
=-120V; I
B
=0
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-5A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-10V;f=10MHz
I
E
=0 ; V
CB
=-10V;f=1MHz
60
40
30
60
300
MIN
-120
-120
-7
-0.9
-1.25
TYP.
2SA1077
MAX
UNIT
V
V
V
-1.8
-1.7
-50
-1
-50
200
V
V
μA
mA
μA
MHz
470
pF
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
I
C
=-7.5A; R
L
=4Ω
I
B1
=-I
B2
=-0.75A;
0.15
0.5
0.11
μs
μs
μs
2
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