MBM29LV160BE70TR-E1 datasheet, PDF

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MBM29LV160BE70TR-E1: DescriptionFlash, 1MX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48; Categorystorage storage; File Size338KB，59 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/; Environmental Compliance

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MBM29LV160BE70TR-E1 Overview

Flash, 1MX16, 70ns, PDSO48, PLASTIC, REVERSE, TSOP1-48

MBM29LV160BE70TR-E1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TSOP1
package instruction	PLASTIC, REVERSE, TSOP1-48
Contacts	48
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	70 ns
Other features	ALSO CONFIGURABLE AS 2M X 8
Spare memory width	8
startup block	BOTTOM
JESD-30 code	R-PDSO-G48
JESD-609 code	e3
length	18.4 mm
memory density	16777216 bi
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
type	NOR TYPE
width	12 mm
Base Number Matches	1

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SPANSION Flash Memory

Data Sheet

September 2003

This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and

Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

these products will be offered to customers of both AMD and Fujitsu.

Continuity of Specifications

There is no change to this datasheet as a result of offering the device as a SPANSION

revisions will occur when appropriate, and changes will be noted in a revision summary.

product. Future routine

Continuity of Ordering Part Numbers

AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these

products, please use only the Ordering Part Numbers listed in this document.

For More Information

Please contact your local AMD or Fujitsu sales office for additional information about SPANSION

solutions.

memory

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20883-6E

FLASH MEMORY

CMOS

16M (2M

8/1M

16) BIT

MBM29LV160TE/BE

70/90

GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words

of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA

packages. The device is designed to be programmed in-system with the standard system 3.0 V V

supply.

12.0 V V

and 5.0 V V

are not required for write or erase operations. The device can also be reprogrammed

in standard EPROM programmers.

The standard MBM29LV160TE/BE offers access times of 70 ns and 90 ns allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E

PROMs. Commands are

written to the command register using standard microprocessor write timings. Register contents serve as input

to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the

Embedded Program

* Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase

Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed

before executing the erase operation. During erase, the device automatically times the erase pulse widths and

verifies proper cell margins.

(Continued)

PRODUCT LINE UP

Part No.

Power Supply Voltage V

(V)

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

MBM29LV160TE/160BE

= 3.0 V

+0.6 V

–0.3 V

MBM29LV160TE

70/90

/MBM29LV160BE

70/90

(Continued)

Any individual sector is typically erased and verified in 1.0 second (if already preprogrammed).

The device also features sector erase architecture. The sector mode allows each sector to be erased and

reprogrammed without affecting other sectors. The MBM29LV160TE/BE is erased when shipped from the factory.

The device features single 3.0 V power supply operation for both read and write functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low V

detector automatically

inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ

by the Toggle Bit feature on DQ

, or the RY/BY output pin. Once the end of a program or erase cycle has been

completed, the device internally resets to the read mode.

The MBM29LV160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Em-

bedded Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then

reset to the read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset

occurs during the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically

reset to the read mode and will have erroneous data stored in the address locations being programmed or

erased. These locations need re-writing after the Reset. Resetting the device enables the system’s micropro-

cessor to read the boot-up firmware from the Flash memory.

Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest

levels of quality, reliability, and cost effectiveness. The MBM29LV160TE/BE memory electrically erases all bits

within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word

at a time using the EPROM programming mechanism of hot electron injection.

Embedded Erase

and Embedded Program

are trademarks of Advanced Micro Devices, Inc.

PACKAGES

48-pin plastic TSOP (1)

Marking Side

48-pin plastic TSOP (1)

Marking Side

(FPT-48P-M19)

(FPT-48P-M20)

48-pin plastic CSOP

48-ball plastic FBGA

(LCC-48P-M03)

(BGA-48P-M11)

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