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DE28F800F3B125

Description
Flash, 512KX16, 30ns, PDSO56, 16 X 23.70 MM, SSOP-56
Categorystorage    storage   
File Size290KB,48 Pages
ManufacturerIntel
Websitehttp://www.intel.com/
Download Datasheet Parametric Compare View All

DE28F800F3B125 Overview

Flash, 512KX16, 30ns, PDSO56, 16 X 23.70 MM, SSOP-56

DE28F800F3B125 Parametric

Parameter NameAttribute value
Parts packaging codeSSOP
package instruction16 X 23.70 MM, SSOP-56
Contacts56
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time30 ns
Other featuresMIN 100,000 BLOCK ERASE CYCLES; BOTTOM BOOT BLOCK
startup blockBOTTOM
JESD-30 codeR-PDSO-G56
length23.7 mm
memory density8388608 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals56
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, SHRINK PITCH
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.9 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
typeNOR TYPE
width13.3 mm
Base Number Matches1
3 Volt Fast Boot Block Flash Memory
28F800F3—Automotive
Preliminary Datasheet
Product Features
s
s
s
s
s
High Performance
— Up to 50 MHz Effective Zero Wait-State
Performance
— Synchronous Burst-Mode Reads
— Asynchronous Page-Mode Reads
SmartVoltage Technology
— 3.0 V−3.6 V Read and Write Operations for
Low Power Designs
— 12 V V
PP
Fast Factory Programming
Flexible I/O Voltage
— 1.65 V I/O Reduces Overall System Power
Consumption
5 V-Safe I/O Enables Interfacing to
5 V Devices
s
s
s
s
s
s
Enhanced Data Protection
— Absolute Write Protection with
V
PP
= GND
— Block Locking
— Block Erase/Program Lockout during Power
Transitions
s
Manufactured on ETOX™ V Flash Technology
Supports Code Plus Data Storage
— Optimized for Flash Data Integrator (FDI)
and other Intel
®
Software
— Fast Program Suspend Capability
— Fast Erase Suspend Capability
Flexible Blocking Architecture
— Eight 4-Kword Blocks for Data
— 32-Kword Main Blocks for Code
— Top or Bottom Boot Configurations
Extended Cycling Capability
Low Power Consumption
Automated Program and Block Erase
Algorithms
— Command User Interface for Automation
— Status Register for System Feedback
Industry-Standard Packaging
— 56-Lead SSOP
— Intel
®
Easy BGA
The Intel
®
3 Volt Fast Boot Block Flash memory offers the highest performance synchronous burst reads—
making it an ideal memory solution for burst CPUs. The Intel 3 Volt Fast Boot Block Flash memory also
supports asynchronous page mode operation for non-clocked memory subsystems. Combining high read
performance with the intrinsic nonvolatility of flash memory eliminates the traditional redundant memory
paradigm of shadowing code from a slower nonvolatile storage source to a faster execution memory device,
(e.g., SRAM SDRAM), for improved system performance. By adding 3 Volt Fast Boot Block Flash
memory to your system you could reduce the total memory requirement, which helps increase reliability
and reduce overall system power consumption—all while reducing system cost.
This family of products is manufactured on Intel
®
0.4
µm
ETOX™ V process technology. They are
available in a wide variety of industry-standard packaging technologies.
Notice:
This document contains preliminary information on new products in production. The
specifications are subject to change without notice. Verify with your local Intel sales office that
you have the latest datasheet before finalizing a design.
Order Number: 290686-001
October 1999

DE28F800F3B125 Related Products

DE28F800F3B125 DE28F800F3T125
Description Flash, 512KX16, 30ns, PDSO56, 16 X 23.70 MM, SSOP-56 Flash, 512KX16, 30ns, PDSO56, 16 X 23.70 MM, SSOP-56
Parts packaging code SSOP SSOP
package instruction 16 X 23.70 MM, SSOP-56 16 X 23.70 MM, SSOP-56
Contacts 56 56
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum access time 30 ns 30 ns
Other features MIN 100,000 BLOCK ERASE CYCLES; BOTTOM BOOT BLOCK MIN 100,000 BLOCK ERASE CYCLES; TOP BOOT BLOCK
startup block BOTTOM TOP
JESD-30 code R-PDSO-G56 R-PDSO-G56
length 23.7 mm 23.7 mm
memory density 8388608 bi 8388608 bi
Memory IC Type FLASH FLASH
memory width 16 16
Number of functions 1 1
Number of terminals 56 56
word count 524288 words 524288 words
character code 512000 512000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
organize 512KX16 512KX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SSOP SSOP
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, SHRINK PITCH SMALL OUTLINE, SHRINK PITCH
Parallel/Serial PARALLEL PARALLEL
Programming voltage 3 V 3 V
Certification status Not Qualified Not Qualified
Maximum seat height 1.9 mm 1.9 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V
surface mount YES YES
technology CMOS CMOS
Temperature level AUTOMOTIVE AUTOMOTIVE
Terminal form GULL WING GULL WING
Terminal pitch 0.8 mm 0.8 mm
Terminal location DUAL DUAL
type NOR TYPE NOR TYPE
width 13.3 mm 13.3 mm
Base Number Matches 1 1

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