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BSS127ZL-AE3-R

Description
Small Signal Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size257KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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BSS127ZL-AE3-R Overview

Small Signal Field-Effect Transistor,

BSS127ZL-AE3-R Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Codeunknown

BSS127ZL-AE3-R Preview

UNISONIC TECHNOLOGIES CO., LTD
BSS127Z
0.021A, 600V ENHANCEMENT
N-CHANNEL MOSFET
DESCRIPTION
The UTC
BSS127Z
is an enhancement N-channel mode Power
FET, it uses UTC’s advanced technology to provide customers ultra
high switching speed and ultra low gate charge.
Power MOSFET
FEATURES
* R
DS(ON)
600Ω @ V
GS
= 4.5V, I
D
=0.016A
R
DS(ON)
500Ω @ V
GS
=10V, I
D
=0.016A
* Ultra Low Gate Charge (Typical 140nC)
* Ultra High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
BSS127ZL-AE2-R
BSS127ZG-AE2-R
SOT-23-3
BSS127ZL-AE3-R
BSS127ZG-AE3-R
SOT-23
Note: Pin Assignment: G: Gate
S: Source
D: Drain
Pin Assignment
1
2
3
G
S
D
G
S
D
Packing
Tape Reel
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-B76.A
BSS127Z
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
600
V
±20
V
T
A
=25°C
0.021
A
I
D
Continuous
Drain Current
T
A
=70°C
0.017
A
Pulsed (T
A
=25°C)
I
DM
0.09
A
Peak Diode Recovery dv/dt
dv/dt
6
kV/µs
Power Dissipation (T
A
=25°C)
P
D
0.3
W
Junction Temperature
T
J
-55 ~ +150
°C
Storage Temperature Range
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
SYMBOL
θ
JA
RATINGS
325
UNIT
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Forward
Gate-Source Leakage Current
Reverse
Drain-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
SYMBOL
BV
DSS
I
GSS
I
D(OFF)
V
GS(TH)
R
DS(ON)
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
V
GS
=0V, V
DS
=600V, T
J
=25°C
V
GS
=0V, V
DS
=600V, T
J
=150°C
V
DS
=V
GS
, I
D
=8µA
V
GS
=4.5V, I
D
=0.016A
V
GS
=10V, I
D
=0.016A
MIN
600
+10
-10
0.1
10
1.4
280
260
7
6.2
1.8
1
0.6
0.15
6.1
9.7
14
115
0.016
0.09
1.2
220
0.14
2.6
600
500
TYP MAX UNIT
V
μA
μA
µA
µA
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=0~10V, V
DS
=480V,
Gate to Source Charge
Q
GS
I
D
=0.01A
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=300V, V
GS
=10V,
Rise Time
t
R
I
D
=0.01A, R
G
=6Ω
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
T
A
=25°C
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
T
A
=25°C
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
F
=0.016A, V
GS
=0V, T
J
=25°C
Body Diode Reverse Recovery Time
t
rr
V
R
=30V, I
F
=0.016A,
dI
F
/dt=100A/µs
Body Diode Reverse Recovery Charge
Q
rr
Notes: 1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
300µs, Duty Cycle
2.0%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-B76.A
BSS127Z
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-B76.A
BSS127Z
TYPICAL CHARACTERISTICS
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-B76.A

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BSS127ZL-AE3-R BSS127ZL-AE2-R BSS127ZG-AE3-R BSS127ZG-AE2-R
Description Small Signal Field-Effect Transistor, Small Signal Field-Effect Transistor, Small Signal Field-Effect Transistor, Small Signal Field-Effect Transistor,
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
Reach Compliance Code unknown unknown unknown unknown
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