EEWORLDEEWORLDEEWORLD

Part Number

Search

BC850-C-RTK/PU

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size30KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric Compare View All

BC850-C-RTK/PU Overview

Small Signal Bipolar Transistor,

BC850-C-RTK/PU Parametric

Parameter NameAttribute value
MakerKEC
package instruction,
Reach Compliance Codeunknown
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION .
FEATURES
・For
Complementary With PNP Type BC859/860.
・Suffix
U
: Qualified to AEC-Q101.
ex) BC850-B-RTK/PU
A
G
H
BC849/850
EPITAXIAL PLANAR NPN TRANSISTOR
L
E
B
L
2
1
3
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
BC849
BC850
BC849
BC850
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
RATING
30
50
30
45
5
100
350
150
-55½150
UNIT
V
Q
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
M
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V
1. EMITTER
V
mA
mW
2. BASE
3. COLLECTOR
P
C
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Base-Emitter Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification
BC849
BC850
B:200½450,
BC849
BC850
BC849
BC850
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
(Note)
V
BE(ON)
1
V
BE(ON)
2
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
f
T
C
ob
NF
C:420½800
TEST CONDITION
I
C
=10mA, I
B
=0
I
C
=10μ I
E
=0
A,
I
E
=10μ I
C
=0
A,
V
CB
=30V, I
E
=0
I
C
=2mA, V
CE
=5V
I
C
=2mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, V
CE
=5V, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=200μ V
CE
=5V
A,
Rg=10kΩ, f=1kHz
MIN.
30
45
30
50
5
-
200
0.58
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
0.66
-
0.09
0.2
0.7
0.9
300
2.5
-
-
MAX.
-
-
-
-
-
15
800
0.7
0.77
0.25
0.6
-
-
-
4.5
4.0
1.0
V
V
V
MHz
pF
dB
UNIT
V
V
V
nA
Emitter-Base Breakdown Voltage
Marking
Lot No.
MARK SPEC
TYPE
MARK
BC849B
2B
BC849C
2C
BC850B
2F
BC850C
2G
Type Name
2018. 04. 10
Revision No : 3
K
SOT-23
J
D
1/1

BC850-C-RTK/PU Related Products

BC850-C-RTK/PU BC850-C BC850-B-RTK/PU BC849-B BC849-C BC850-RTK/PU BC849-B-RTK/PU BC849-C-RTK/PU BC849-RTK/PU BC850-B
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknow
Maker KEC KEC - KEC KEC KEC KEC KEC KEC KEC
High-speed (I) FFT hardware design in FDM modulation and demodulation
[i=s] This post was last edited by paulhyde on 2014-9-15 08:56 [/i] High-speed (I) FFT hardware design for FDM modulation and demodulation...
xiangzi001 Electronics Design Contest
How can I directly dive into the assembly code in EVC? Thank you
How can I directly dive into assembly code in EVC? Help!!!...
fionachow Embedded System
Mini FM Wireless Microphone
...
yuandayuan6999 PCB Design
Cadence design pads, through-hole pads startlayer and endlayer must be designed with thermal pads and antipads
As the title says, my personal understanding is that the startlayer of through-hole pads is the top layer, and the endlayer is the bottom layer. Thermal pads and antipads are used in the case of negat...
wudayongnb PCB Design
Improving LCD backlight dimming granularity(2)
The result is a total of 93 dimming steps, using the same quasi-exponential curve to increase (or decrease) the ILED current from zero to the maximum ILED current set in the chip. Assuming a maximum I...
songbo Analog electronics
Application issues of CS8900A network chip
I am currently porting ARM9+CS8900A+LWIP. Based on the 10BASE-T mode and IO access mode, after connecting the network cable and powering on the system, the LANLED of the CS8900A flashes and the LINKLE...
hyf9290 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 157  2020  1274  2704  2623  4  41  26  55  53 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号