2SK1936-01 datasheet, PDF - EEWORLD Datasheet

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2SK1936-01: DescriptionPower Field-Effect Transistor, 10A I(D), 500V, 0.76ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size214KB，2 Pages; ManufacturerFuji Electric Co., Ltd.

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2SK1936-01 Overview

Power Field-Effect Transistor, 10A I(D), 500V, 0.76ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

2SK1936-01 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-3P
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Other features	HIGH VOLTAGE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.76 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK1936-01

FAP-IIA Series

> Features

-

High Speed Switching

Low On-Resistance

No Secondary Breakdown

Low Driving Power

High Voltage

V

GS

= ± 30V Guarantee

Avalanche Proof

N-channel MOS-FET

500V

0,76Ω

10A

100W

> Outline Drawing

> Applications

-

Switching Regulators

UPS

DC-DC converters

General Purpose Power Amplifier

> Maximum Ratings and Characteristics

- Absolute Maximum Ratings (T

C

=25°C),

unless otherwise specified

Item

Drain-Source-Voltage

Drain-Gate-Voltage (R

GS

=20KΩ)

Continous Drain Current

Pulsed Drain Current

Gate-Source-Voltage

Max. Power Dissipation

Operating and Storage Temperature Range

Symbol

V

DS

V

DGR

I

D

I

D(puls)

V

GS

P

D

T

ch

T

stg

Rating

500

10

40

±30

100

150

-55 ~ +150

Unit

V

A

V

W

°C

> Equivalent Circuit

- Electrical Characteristics (T

C

=25°C),

unless otherwise specified

Item

Drain-Source Breakdown-Voltage

Gate Threshhold Voltage

Zero Gate Voltage Drain Current

Gate Source Leakage Current

Drain Source On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On-Time t

on

(t

on

=t

d(on)

+t

r

)

Turn-Off-Time t

off

(t

on

=t

d(off)

+t

f

)

Avalanche Capability

Continous Reverse Drain Current

Pulsed Reverse Drain Current

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

Symbol

V

(BR)DSS

V

GS(th)

I

DSS

I

R

g

C

t

I

V

t

Q

GSS

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

AV

DR

DRM

SD

rr

Test conditions

I

D

=1mA

V

GS

=0V

I

D

=1mA

V

DS=

V

GS

V

DS

=500V

T

ch

=25°C

V

GS

=0V

T

ch

=125°C

V

GS

=±30V

V

DS

=0V

I

D

=5A

V

GS

=10V

I

D

=5A

V

DS

=25V

V

DS

=25V

V

GS

=0V

f=1MHz

V

CC

=300V

I

D

=10A

V

GS

=10V

R

GS

=10

Ω

T

ch

=25°C

L = 100µH

Min.

500

2,5

Typ.

3,0

10

0,2

10

0,6

10,0

1500

160

35

15

40

70

60

Max.

3,5

500

1,0

100

0,76

2200

240

50

25

60

100

90

10

40

1,70

5,0

10

I

F

=2xI

DR

V

GS

=0V T

ch

=25°C

I

F

=I

DR

V

GS

=0V

-dI

F

/dt=100A/µs T

ch

=25°C

1,12

450

3

Unit

V

µA

mA

nA

Ω

S

pF

ns

A

V

ns

µC

- Thermal Characteristics

Item

Thermal Resistance

Symbol

R

th(ch-a)

R

th(ch-c)

Test conditions

channel to air

channel to case

Min.

Typ.

Max.

35

1,25

Unit

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

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