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TLC271IP

Description
OP-AMP, 13000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8
CategoryAnalog mixed-signal IC    Amplifier circuit   
File Size3MB,84 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance
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TLC271IP Overview

OP-AMP, 13000uV OFFSET-MAX, 1.7MHz BAND WIDTH, PDIP8, ROHS COMPLIANT, PLASTIC, DIP-8

TLC271IP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeDIP
package instructionROHS COMPLIANT, PLASTIC, DIP-8
Contacts8
Reach Compliance Codeunknown
Amplifier typeOPERATIONAL AMPLIFIER
Maximum average bias current (IIB)0.00006 µA
Nominal Common Mode Rejection Ratio80 dB
Maximum input offset voltage13000 µV
JESD-30 codeR-PDIP-T8
JESD-609 codee4
length9.81 mm
Humidity sensitivity levelNOT APPLICABLE
Number of functions1
Number of terminals8
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height5.08 mm
Nominal slew rate2.9 V/us
Supply voltage upper limit18 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceNICKEL PALLADIUM GOLD
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Nominal Uniform Gain Bandwidth1700 kHz
width7.62 mm

TLC271IP Preview

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TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
D
D
D
D
D
D
D
D
NC
IN –
NC
IN +
NC
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
OFFSET N1
NC
BIAS SELECT
NC
NC
V
DD
NC
OUT
NC
PACKAGE
CHIP CARRIER
(FK)
CERAMIC DIP
(JG)
D
D
Input Offset Voltage Drift . . . Typically
0.1
µV/Month,
Including the First 30 Days
Wide Range of Supply Voltages Over
Specified Temperature Range:
0°C to 70°C . . . 3 V to 16 V
– 40°C to 85°C . . . 4 V to 16 V
– 55°C to 125°C . . . 5 V to 16 V
Single-Supply Operation
Common-Mode Input Voltage Range
Extends Below the Negative Rail (C-Suffix
and I-Suffix Types)
Low Noise . . . 25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)
Output Voltage Range Includes Negative
Rail
High Input Impedance . . . 10
12
Typ
ESD-Protection Circuitry
Small-Outline Package Option Also
Available in Tape and Reel
Designed-In Latch-Up Immunity
D, JG, OR P PACKAGE
(TOP VIEW)
OFFSET N1
IN –
IN +
GND
1
2
3
4
8
7
6
5
BIAS SELECT
V
DD
OUT
OFFSET N2
FK PACKAGE
(TOP VIEW)
description
The TLC271 operational amplifier combines a
wide range of input offset voltage grades with low
NC – No internal connection
offset voltage drift and high input impedance. In
addition, the TLC271 offers a bias-select mode
that allows the user to select the best combination of power dissipation and ac performance for a particular
application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset
voltage stability far exceeding the stability available with conventional metal-gate processes.
AVAILABLE OPTIONS
TA
VIOmax
AT 25°C
2 mV
5 mV
10 mV
2 mV
5 mV
10 mV
10 mV
SMALL OUTLINE
(D)
TLC271BCD
TLC271ACD
TLC271CD
TLC271BID
TLC271AID
TLC271ID
TLC271MD
PLASTIC DIP
(P)
TLC271BCP
TLC271ACP
TLC271CP
TLC271BIP
TLC271AIP
TLC271IP
TLC271MP
0°C to 70°C
– 40°C to 85°C
– 55°C to 125°C
TLC271MFK
TLC271MJG
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
LinCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
2001, Texas Instruments Incorporated
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
NC
GND
NC
OFFSET N2
NC
1
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
DEVICE FEATURES
PARAMETER†
PD
SR
Vn
B1
BIAS-SELECT MODE
HIGH
3375
3.6
25
1.7
MEDIUM
525
0.4
32
0.5
170
LOW
50
0.03
68
0.09
480
UNIT
µW
V/µs
nV/√Hz
MHz
V/mV
AVD
23
† Typical at VDD = 5 V, TA = 25°C
description (continued)
Using the bias-select option, these cost-effective devices can be programmed to span a wide range of
applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are
available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)
low-offset version. The extremely high input impedance and low bias currents, in conjunction with good
common-mode rejection and supply voltage rejection, make these devices a good choice for new
state-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and
inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density
system applications.
The device inputs and output are designed to withstand – 100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000
V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices
as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
bias-select feature
The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels depending
on the level of performance desired. The tradeoffs between bias levels involve ac performance and power
dissipation (see Table 1).
Table 1. Effect of Bias Selection on Performance
TYPICAL PARAMETER VALUES
25 C,
TA = 25°C, VDD = 5 V
PD
SR
Vn
B1
φ
m
AVD
Power dissipation
Slew rate
Equivalent input noise voltage at f = 1 kHz
Unity-gain bandwidth
Phase margin
Large-signal differential voltage amplification
MODE
HIGH BIAS
RL = 10 kΩ
3.4
3.6
25
1.7
46°
23
MEDIUM BIAS
RL = 100 kΩ
0.5
0.4
32
0.5
40°
170
LOW BIAS
RL = 1 MΩ
0.05
0.03
68
0.09
34°
480
V/mV
UNIT
mW
V/µs
nV/√Hz
MHz
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
bias selection
Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). For
medium-bias applications, it is recommended that the bias select pin be connected to the midpoint between the
supply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supply
applications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use of
large-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,
large-value resistors used in conjunction with a large-value capacitor require significant time to charge up to
the supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is within
the voltages specified in Figure 1.
VDD
Low
To the Bias
Select Pin
Medium
1 MΩ
BIAS MODE
Low
BIAS-SELECT VOLTAGE
(single supply)
VDD
1 V to VDD – 1 V
GND
High
1 MΩ
0.01
µF
Medium
High
Figure 1. Bias Selection for Single-Supply Applications
high-bias mode
In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.
Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gain
bandwidth is typically greater than 1 MHz.
medium-bias mode
The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.
Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of that
consumed by bipolar devices.
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
3
TLC271, TLC271A, TLC271B
LinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERS
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
low-bias mode
In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low power
consumption, and high differential voltage gain.
ORDER OF CONTENTS
TOPIC
schematic
absolute maximum ratings
recommended operating conditions
electrical characteristics
operating characteristics
typical characteristics
electrical characteristics
operating characteristics
typical characteristics
electrical characteristics
operating characteristics
typical characteristics
parameter measurement information
application information
BIAS MODE
all
all
all
high
(Figures 2 – 33)
medium
(Figures 34 – 65)
low
(Figures 66 – 97)
all
all
equivalent schematic
VDD
P3
P9A
R6
P12
P4
P1
P2
R2
P5
P9B
P11
IN –
R1
N5
P10
N11
P6A
P6B
P7B
P7A
P8
IN +
R5
C1
N3
N6
N7
N1
R3
D1
R4
N2
N4
D2
R7
N12
N9
N13
N10
OFFSET OFFSET
N1
N2
OUT
GND
BIAS
SELECT
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
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