Variable Capacitance Diode, 6.8pF C(T), Silicon, DIE-1
| Parameter Name | Attribute value |
| Maker | Cobham PLC |
| Parts packaging code | DIE |
| package instruction | O-LALF-W2 |
| Contacts | 1 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | HIGH Q |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 5% |
| Nominal diode capacitance | 6.8 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| minimum quality factor | 75 |
| Maximum reverse current | 0.5 µA |
| Reverse test voltage | 50 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
京公网安备 11010802033920号
EEWORLD
