2SB1197-P datasheet, PDF - EEWORLD Datasheet

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2SB1197-P: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SMALL PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size66KB，2 Pages; ManufacturerMicro Commercial Components (MCC)

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2SB1197-P Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, SMALL PACKAGE-3

2SB1197-P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.8 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

2SB1197

2SB1197-P

2SB1197-Q

2SB1197-R

PNP Silicon

Epitaxial Transistors

•

Features

Small Package

Mounting:any position

ROHS Compliant

Case Material: Molded Plastic.

Classification Rating 94V-0

UL Flammability

SOT-23

Maximum Ratings @ T

= 25

(unless otherwise noted)

Symbol

STG

Parameter

Collector Current

Total Device Dissipation

Junction Temperature

Storage Temperature Range

Value

-0.8

0.2

150

-55 to +150

Unit

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

OFF CHARACTERISTICS

)CEO

)CBO

)EBO

Parameter

Collector-Emitter Breakdown Voltage

=-1mAdc,I

=0)

Collector-Base Breakdown Voltage

=-50uAdc,I

=0)

Collector-Base Breakdown Voltage

=-50uAdc,I

=0)

Collector-Base Cutoff Current

=-20Vdc, I

=0)

Emitter-Base Cutoff Current

=-4.0Vdc, I

=0)

DC Current Gain

=-100mAdc, V

=-3.0Vdc)

Collector-Emitter Saturation Voltage

=-500mAdc, I

=-50mAdc)

Transition Frequency

=-5Vdc,I

=-50mAdc,f=100MHZ)

82-180

AHP

120-270

AHQ

Min

-32

-40

-5.0

Max

Units

-0.5

µAdc

uAdc

DIM

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

DIMENSIONS

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

CBO

EBO

ON CHARACTERISTICS

CE(sat)

390

-0.5

Vdc

MHZ

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Rank

Range

Marking

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

CLASSIFICATION OF

180-390

AHR

.037

.950

.037

.950

Revision:

www.mccsemi.com

1 of 2

2007/03/01

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