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5962-01-322-3934

Description
Standard SRAM, 16KX4, 55ns, CMOS, CDIP22
Categorystorage    storage   
File Size90KB,8 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric Compare View All

5962-01-322-3934 Overview

Standard SRAM, 16KX4, 55ns, CMOS, CDIP22

5962-01-322-3934 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionDIP, DIP22,.3
Reach Compliance Code_compli
Maximum access time55 ns
I/O typeCOMMON
JESD-30 codeR-XDIP-T22
memory density65536 bi
Memory IC TypeSTANDARD SRAM
memory width4
Number of terminals22
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX4
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeDIP
Encapsulate equivalent codeDIP22,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.0006 A
Minimum standby current2 V
Maximum slew rate0.11 mA
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperature6
Base Number Matches1
CMOS Static RAM
64K (16K x 4-Bit)
IDT7188S
IDT7188L
x
Features
High-speed (equal access and cycle times)
– Military: 25/35/45/55/70/85ns (max.)
Low power consumption
Battery backup operation — 2V data retention
(L version only)
Available in high-density industry standard 22-pin, 300 mil
ceramic DIP
Produced with advanced CMOS technology
Inputs/outputs TTL-compatible
Military product compliant to MIL-STD-883, Class B
innovative circuit design techniques, provides a cost effective approach
for memory intensive applications.
Access times as fast as 25ns are available. The IDT7188 offers a
reduced power standby mode, I
SB1
, which is activated when
CS
goes
HIGH. This capability significantly decreases power while enhancing
system reliability. The low-power version (L) version also offers a battery
backup data retention capability where the circuit typically consumes only
30µW operating from a 2V battery.
All inputs and outputs are TTL-compatible and operate from a single
5V supply. The IDT7188 is packaged in a 22-pin, 300 mil ceramic DIP
providing excellent board-level packing densities.
Military grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.
x
x
x
x
x
x
Description
The IDT7188 is a 65,536-bit high-speed static RAM organized as
16K x 4. It is fabricated using IDT’s high-performance, high-reliability
technology — CMOS. This state-of-the-art technology, combined with
Functional Block Diagram
A
0
V
CC
GND
65,536-BIT
MEMORY ARRAY
DECODER
A
13
I/O
0
I/O
1
I/O
2
I/O
3
COLUMN I/O
INPUT
DATA
CONTROL
,
CS
WE
2989 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc.
DSC-2989/09

5962-01-322-3934 Related Products

5962-01-322-3934 5962-01-388-4608
Description Standard SRAM, 16KX4, 55ns, CMOS, CDIP22 Standard SRAM, 16KX4, 45ns, CMOS, CDIP22
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
package instruction DIP, DIP22,.3 DIP, DIP22,.3
Reach Compliance Code _compli _compli
Maximum access time 55 ns 45 ns
I/O type COMMON COMMON
JESD-30 code R-XDIP-T22 R-XDIP-T22
memory density 65536 bi 65536 bi
Memory IC Type STANDARD SRAM STANDARD SRAM
memory width 4 4
Number of terminals 22 22
word count 16384 words 16384 words
character code 16000 16000
Operating mode ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C
organize 16KX4 16KX4
Output characteristics 3-STATE 3-STATE
Package body material CERAMIC CERAMIC
encapsulated code DIP DIP
Encapsulate equivalent code DIP22,.3 DIP22,.3
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260
power supply 5 V 5 V
Certification status Not Qualified Not Qualified
Filter level 38535Q/M;38534H;883B 38535Q/M;38534H;883B
Maximum standby current 0.0006 A 0.02 A
Minimum standby current 2 V 4.5 V
Maximum slew rate 0.11 mA 0.14 mA
Nominal supply voltage (Vsup) 5 V 5 V
surface mount NO NO
technology CMOS CMOS
Temperature level MILITARY MILITARY
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal pitch 2.54 mm 2.54 mm
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 6 6
Base Number Matches 1 1
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