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DL4151

Description
Rectifier Diode, Schottky, 1 Element, 0.5A, 75V V(RRM), Silicon, GLASS, MINIMELF-2
CategoryDiscrete semiconductor    diode   
File Size356KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Download Datasheet Parametric View All

DL4151 Overview

Rectifier Diode, Schottky, 1 Element, 0.5A, 75V V(RRM), Silicon, GLASS, MINIMELF-2

DL4151 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicro Commercial Components (MCC)
Parts packaging codeMELF
package instructionGLASS, MINIMELF-2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LELF-R2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.5 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.002 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature30

DL4151 Preview

MCC
Features
l
l
l
l
Fast Switching Speed
  omponents
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DL4151
High Reverse Breakdown Voltage
Low Forward Voltage Drop
High Conductance
Schottky Barrier
Switching Diode
Mechanical Data
l
Case: MiniMELF, Glass
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: Indicated by Cathode Band
MINIMELF
Cathode Mark
l
Weight: 0.05 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current(Note1)
Power Dissipation(Note 1)
Thermal Resistance(Note 1)
Operation/Storage Temp. Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
P
d
R
Tj, T
STG
DL4151
75
Unit
V
A
B
C
50
500
500
350
-55 to 150
V
mA
mW
K/W
o
DIMENSION
DIM
A
B
C
INCHES
MIN
.134
.008
.055
MAX
.142
.016
.059
MIN
3.40
0.20
1.40
MM
MAX
3.60
0.40
1.50
NOTE
C
Electrical Characteristics @ 25 C Unless Otherwise Specified
o
Charateristic
Reverse Leakge Current.
Forward Volt. Drop
Junction Capacitance
Reverse Recovery Time
Symbol Min
I
RM
V
FM
Cj
t
rr
-----
-----
-----
-----
Max
50
1
2.0
2.0
Unit
Test Cond.
SUGGESTED SOLDER
PAD LAYOUT
0.105
nA V
R
=50V
V
pF
ns
I
F
=50mA
V
R
=0V, f=1.0MHz
I
F
=10mA,
I
R
=1mA , V
R
= 6V
R
L
=100OHM
0.075”
Note
: 1. Valid provided that electrodes are kept at
ambient temperature
0.030”
www.mccsemi.com
DL4151
Figure 1
Typical Forward Characteristics
20
10
6
4
500
2
MilliAmps 1
.6
.4
.2
25°C
.1
.06
.04
.02
.01
.4
.6
.8
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
1.0
1.2
1.4
0
100
400
600
MCC
Figure 2
Forward Derating Curve
300
MilliWatts
200
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
75
100
°C
Admissable Power Dissipation - MilliWatts
versus
Ambient Temperature -
°C
125
150
175
Figure 3
Junction Capacitance
10
6
4
2
pF
1
.6
.4
.2
.1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
T
J
=25°C
Junction Capacitance - pF
versus
Reverse Voltage - Volts
www.mccsemi.com
DL4151
Figure 4
Typical Reverse Characteristics
1000
600
400
200
100
60
40
20
10
NanoAmps
6
4
2
1
.6
.4
.2
.1
20
40
60
T
J
Instantaneous Reverse Leakage Current - NanoAmperes
versus
Junction Temperature -
°C
80
100
120
140
T
A
=25°C
100
0
1
4
6
MilliAmps
600
500
400
300
200
MCC
Figure 5
Peak Forward Surge Current
2
8 10
Cycles
20
40
60 80 100
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
www.mccsemi.com
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