CSD19536KTTT datasheet, PDF - EEWORLD Datasheet

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CSD19536KTTT: DescriptionCSD19536KTT 100 V N-Channel NexFET™ Power MOSFET 3-DDPAK/TO-263; CategoryDiscrete semiconductor The transistor; File Size880KB，14 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/; Environmental Compliance

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CSD19536KTTT Overview

CSD19536KTT 100 V N-Channel NexFET™ Power MOSFET 3-DDPAK/TO-263

CSD19536KTTT Parametric

Parameter Name	Attribute value
Brand Name	Texas Instruments
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Texas Instruments
package instruction	TO-263, D2PAK-3/2
Reach Compliance Code	not_compliant
Factory Lead Time	6 weeks
Samacsys Confidence	4
Samacsys Status	Released
Samacsys PartID	414096
Samacsys Pin Count	3
Samacsys Part Category	Transistor
Samacsys Package Category	Other
Samacsys Footprint Name	KTT-(R-PSFM-G3)
Samacsys Released Date	2017-08-21 13:53:05
Is Samacsys	N
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	806 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	200 A
Maximum drain-source on-resistance	0.0028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	61 pF
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G3
JESD-609 code	e3
Humidity sensitivity level	2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	400 A
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

CSD19536KTTT Related Products

	CSD19536KTTT	CSD19536KTT
Description	CSD19536KTT 100 V N-Channel NexFET™ Power MOSFET 3-DDPAK/TO-263	CSD19536KTT 100 V N-Channel NexFET™ Power MOSFET 3-DDPAK/TO-263
Brand Name	Texas Instruments	Texas Instruments
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Texas Instruments	Texas Instruments
package instruction	TO-263, D2PAK-3/2	TO-263, D2PAK-3/2
Reach Compliance Code	not_compliant	not_compliant
Factory Lead Time	6 weeks	6 weeks
Samacsys Confidence	4	4
Samacsys Status	Released	Released
Samacsys PartID	414096	292849
Samacsys Pin Count	3	3
Samacsys Part Category	Transistor	MOSFET (N-Channel)
Samacsys Package Category	Other	Other
Samacsys Footprint Name	KTT-(R-PSFM-G3)	KTT-(R-PSFM-G3)
Samacsys Released Date	2017-08-21 13:53:05	2018-08-01 10:33:24
Is Samacsys	N	N
Other features	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	806 mJ	806 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (ID)	200 A	200 A
Maximum drain-source on-resistance	0.0028 Ω	0.0028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	61 pF	61 pF
JEDEC-95 code	TO-263AB	TO-263AB
JESD-30 code	R-PSSO-G3	R-PSSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	2	2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	400 A	400 A
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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