12A, 350V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | unknow |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 350 V |
| Maximum drain current (ID) | 12 A |
| Maximum drain-source on-resistance | 0.4 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Humidity sensitivity level | NOT SPECIFIED |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 20 A |
| Certification status | COMMERCIAL |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
