BAS70-TP-HF datasheet, PDF - EEWORLD Datasheet

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BAS70-TP-HF: DescriptionRectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size287KB，4 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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BAS70-TP-HF Overview

Rectifier Diode, Schottky, 1 Element, 0.07A, 70V V(RRM), Silicon,

BAS70-TP-HF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micro Commercial Components (MCC)
package instruction	R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output current	0.07 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.2 W
Maximum repetitive peak reverse voltage	70 V
Maximum reverse recovery time	0.005 µs
surface mount	YES
technology	SCHOTTKY
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

BAS40

THRU

BAS70

Surface Mount

Schottky Barrier Diode

200 mWatt

SOT-23

Features

SOT-23 Package For surface mount application

Protects from line to V

and line to ground

Low forward voltage and reverse recovery characteristics

Bidirectional-low-forward available with “ -04” suffix (Figure 2)

Tape & Reel EIA Standard 481.

Mechanical Data

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Halogen free available upon request by adding suffix "-HF"

Mounting Position: Any

Weight: .008 grams (approx.)

MAXIMUM RATINGS

Operating Temperature: -55 C to +125 C

Storage Temperature: -55 C to +150 C

Power Dissipation: 200 mWatts @ T

amb

=25 C

BAS40

=200mA

25 C

=70mA

25 C

Forward Continuous Current:

BAS70

BAS40 I

FSM

=600mA @ tp<1s, Tamb=25

Surge Forward Current:

BAS70 I

FSM

=100mA @ tp<1s, Tamb=25 C

DIM

DIMENSIONS

INCHES

MIN

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

DESCRIPTION

Various configurations of Schottky barrier’ s diodes in SOT-23

package are provided for general-purpose use in high-speed

switching ,mixers and detector applications. They may also be

used for signal integrity and counteract the transmission-line

effects with (PC) board trances by clamping over/and undershoot

from signal reflections with the schottky-low-threshold voltages.

This type of termination also does not depend on matching

the transmission line characteristic impedance, making it

particularly useful where line impendance is unknown or a

variable. This methode of termination can control distortions of

clock, data, address, and control lines as well as provides a

stabilizing effect on signal jitter. It can also significantly reduce

power consumption compared to standard resistor-based

termination methods.

MAX

.120

.104

.055

.041

.081

.024

.0039

.044

.007

.020

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Suggested Solder

Pad Layout

.031

.800

.035

.900

.079

2.000

inches

.037

.950

.037

.950

Revision:

www.mccsemi.com

1 of

2013/11/25

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